The Experts below are selected from a list of 312 Experts worldwide ranked by ideXlab platform

Faxian Xiu - One of the best experts on this subject based on the ideXlab platform.

  • photoluminescence study of sb doped p type zno films by Molecular Beam Epitaxy
    Applied Physics Letters, 2005
    Co-Authors: Faxian Xiu, Zheng Yang, L J Mandalapu, D T Zhao, Jianlin Liu
    Abstract:

    We investigated photoluminescence (PL) from reliable and reproducible Sb-doped p-type ZnO films grown on n-Si (100) by Molecular-Beam Epitaxy. Well-resolved PL spectra were obtained from completely dopant-activated samples with hole concentrations above 1.0×1018cm−3. From free electron to acceptor transitions, acceptor binding energy of 0.14 eV is determined, which is in good agreement with analytical results of the temperature-dependent PL measurements. Another broad peak at 3.050 eV, which shifts to lower energy at higher temperatures, indicates the formation of deep acceptor level bands related to Zn vacancies, which are created by Sb doping.

  • high mobility sb doped p type zno by Molecular Beam Epitaxy
    Applied Physics Letters, 2005
    Co-Authors: Faxian Xiu, Zheng Yang, L J Mandalapu, D T Zhao, Jianlin Liu, W P Beyermann
    Abstract:

    Reproducible Sb-doped p-type ZnO films were grown on n-Si (100) by electron-cyclotron-resonance-assisted Molecular-Beam Epitaxy. The existence of Sb in ZnO:Sb films was confirmed by low-temperature photoluminescence measurements. An acceptor-bound exciton (A°X) emission was observed at 3.358 eV at 8 K. The acceptor energy level of the Sb dopant is estimated to be 0.2 eV above the valence band. Temperature-dependent Hall measurements were performed on Sb-doped ZnO films. At room temperature, one Sb-doped ZnO sample exhibited a low resistivity of 0.2Ωcm, high hole concentration of 1.7×1018cm−3 and high mobility of 20.0cm2∕Vs. This study suggests that Sb is an excellent dopant for reliable and reproducible p-type ZnO fabrication.

Jianlin Liu - One of the best experts on this subject based on the ideXlab platform.

  • photoluminescence study of sb doped p type zno films by Molecular Beam Epitaxy
    Applied Physics Letters, 2005
    Co-Authors: Faxian Xiu, Zheng Yang, L J Mandalapu, D T Zhao, Jianlin Liu
    Abstract:

    We investigated photoluminescence (PL) from reliable and reproducible Sb-doped p-type ZnO films grown on n-Si (100) by Molecular-Beam Epitaxy. Well-resolved PL spectra were obtained from completely dopant-activated samples with hole concentrations above 1.0×1018cm−3. From free electron to acceptor transitions, acceptor binding energy of 0.14 eV is determined, which is in good agreement with analytical results of the temperature-dependent PL measurements. Another broad peak at 3.050 eV, which shifts to lower energy at higher temperatures, indicates the formation of deep acceptor level bands related to Zn vacancies, which are created by Sb doping.

  • high mobility sb doped p type zno by Molecular Beam Epitaxy
    Applied Physics Letters, 2005
    Co-Authors: Faxian Xiu, Zheng Yang, L J Mandalapu, D T Zhao, Jianlin Liu, W P Beyermann
    Abstract:

    Reproducible Sb-doped p-type ZnO films were grown on n-Si (100) by electron-cyclotron-resonance-assisted Molecular-Beam Epitaxy. The existence of Sb in ZnO:Sb films was confirmed by low-temperature photoluminescence measurements. An acceptor-bound exciton (A°X) emission was observed at 3.358 eV at 8 K. The acceptor energy level of the Sb dopant is estimated to be 0.2 eV above the valence band. Temperature-dependent Hall measurements were performed on Sb-doped ZnO films. At room temperature, one Sb-doped ZnO sample exhibited a low resistivity of 0.2Ωcm, high hole concentration of 1.7×1018cm−3 and high mobility of 20.0cm2∕Vs. This study suggests that Sb is an excellent dopant for reliable and reproducible p-type ZnO fabrication.

Shumin Wang - One of the best experts on this subject based on the ideXlab platform.

  • Molecular Beam Epitaxy growth of gasb1 xbix without rotation
    Vacuum, 2019
    Co-Authors: Chaodan Chi, Li Yue, Yanchao Zhang, Zhenpu Zhang, Shumin Wang
    Abstract:

    Abstract GaSb1-xBix thin film was grown on a 2 inch GaSb substrate by Molecular Beam Epitaxy (MBE) without substrate rotation. Bi composition is found to vary from 2.76% to 3.98% across the wafer. The distribution of Bi content is mainly determined by spatial non-uniformity of Sb/Ga flux ratio, while Bi flux has slightly influence. Ostwald ripening process is confirmed to be reason for bigger Bi droplets via Bi surface diffusion. With the increase of Sb/Ga flux ratio, Ostwald ripening process is suppressed. At high Bi flux, excess Ga atoms accumulate on surface and form droplets.

  • Molecular Beam Epitaxy growth of alas1 x bi x
    Semiconductor Science and Technology, 2019
    Co-Authors: Li Yue, Yanchao Zhang, Zhenpu Zhang, Chang Wang, Lijuan Wang, Hao Liang, Shumin Wang
    Abstract:

    High quality AlAs1-xBix layers with Bi composition of 3%-10.5% have been successfully grown by Molecular Beam Epitaxy. The Bi incorporation is confirmed by Rutherford backscattering spectroscopy. For a 400 nm thick AlAsBi layer, the strain relaxation occurs when the Bi composition is larger than 6.5%. Flux ratio is calculated from Knudsen-cell model and Maxwell equation, according to the geometrical relationship of our equipment. The Bi incorporation increases with increasing the As-Al flux ratio as well as the Bi flux. The extrapolation lattice constant of hypothetic zincblende AlBi alloy is about 6.23 angstrom.

  • growth and material properties of inpbi thin films using gas source Molecular Beam Epitaxy
    Journal of Alloys and Compounds, 2016
    Co-Authors: Peng Wang, Xiaoyan Wu, Kai Wang, Liyao Zhang, Qian Gong, Shumin Wang
    Abstract:

    The effects of Bi, In flux and PH3 pressure on Bi incorporation, structural and transport properties of InPBi grown by gas source Molecular Beam Epitaxy have been systematically studied. Incorporation of Bi behaves like a dopant and its content increases linearly with Bi flux and inversely with the InP growth rate (In flux), and is independent of the PH3 pressure studied. High PH3 pressure causes rough surface and introduction of Bi improves surface quality. Intrinsic InP grown at a low temperature reveals n-type due to the P-ln antisite defects and the electron density is proportional to the PH3 pressure and inversely proportional to the InP growth rate. Incorporation of Bi induces p-type dopant that compensates the background electron concentration but doesn't degrade the electron mobility for the Bi content up to 2.4%. These results suggest that there is still a large room left to optimize material quality and maximize Bi incorporation in InPBi using gas source Molecular Beam Epitaxy.

Christopher J K Richardson - One of the best experts on this subject based on the ideXlab platform.

  • graphitic carbon growth on si 111 using solid source Molecular Beam Epitaxy
    Applied Physics Letters, 2009
    Co-Authors: Justin C Hackley, J Dipasquale, J D Demaree, Christopher J K Richardson
    Abstract:

    Solid source Molecular Beam Epitaxy is used to explore the growth of carbon films directly on Si(111). It is shown that graphitic carbon is grown by the implementation of a thin amorphous carbon film that suppresses the formation of SiC precipitates. Raman scattering measurements show the D and G vibrational phonon modes, indicating graphitic ordering in the carbon film. X-ray photoelectron spectroscopy is used to verify the formation of sp2 bonds in the graphitic carbon films and confirms the suppression of SiC.

W P Beyermann - One of the best experts on this subject based on the ideXlab platform.

  • high mobility sb doped p type zno by Molecular Beam Epitaxy
    Applied Physics Letters, 2005
    Co-Authors: Faxian Xiu, Zheng Yang, L J Mandalapu, D T Zhao, Jianlin Liu, W P Beyermann
    Abstract:

    Reproducible Sb-doped p-type ZnO films were grown on n-Si (100) by electron-cyclotron-resonance-assisted Molecular-Beam Epitaxy. The existence of Sb in ZnO:Sb films was confirmed by low-temperature photoluminescence measurements. An acceptor-bound exciton (A°X) emission was observed at 3.358 eV at 8 K. The acceptor energy level of the Sb dopant is estimated to be 0.2 eV above the valence band. Temperature-dependent Hall measurements were performed on Sb-doped ZnO films. At room temperature, one Sb-doped ZnO sample exhibited a low resistivity of 0.2Ωcm, high hole concentration of 1.7×1018cm−3 and high mobility of 20.0cm2∕Vs. This study suggests that Sb is an excellent dopant for reliable and reproducible p-type ZnO fabrication.