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M. Rusop - One of the best experts on this subject based on the ideXlab platform.

  • Structural and optical properties of Nickel (Ni)/indium tin oxide (ITO) thin-films deposited by RF magnetron sputtering
    Advanced Materials Research, 2014
    Co-Authors: M. Sobri, Ahmad Shuhaimi, K.m. Hakim, Mohamad Hafiz Mamat, S. Najwa, M. Mazwan, N. Ameera, M.z. Musa, M. Rusop
    Abstract:

    Nickel (Ni)/ indium tin oxide (ITO) thin-films have been deposited on silicon (Si) and glass substrates using radio-frequency (RF) magnetron sputtering at 200°C temperature. ITO layer was deposited on top of Ni layer with various deposition parameter. The material and optical properties of the ITO samples with and without Ni seed layer were analyzed. X-ray diffraction studies shows that the films are crystalline with the typical ITO diffraction peaks of (222), (400) and (411). The FESEM and AFM images shows that the grains have uNiform shapes and sizes. FESEM results reveal that the grain size along the sample surface decreases when the Ni seed layer is added. Both the samples shows higher transmittance of more than 95% in UV-vis spectrometer.

  • Effect of annealing on structural, optical, and electrical properties of Nickel (Ni)/indium tin oxide (ITO) nanostructures prepared by RF magnetron sputtering
    Superlattices and Microstructures, 2014
    Co-Authors: M. Sobri, Ahmad Shuhaimi, K.m. Hakim, Mohamad Hafiz Mamat, S. Najwa, M. Mazwan, N. Ameera, V. Ganesh, Y. Yusnizam, M. Rusop
    Abstract:

    Abstract Nickel (Ni)/indium tin oxide (ITO) nanostructures were deposited on glass and silicon (1 1 1) substrates by RF magnetron sputtering using Nickel and ITO (In–Sn, 90–10%) targets. The post-deposition annealing has been performed for Ni/ITO films in air. The effect of annealing temperature on the electrical, optical and structural properties of ITO films was studied. We found the appearance of (6 2 2) peak in addition to (4 0 0) and (2 2 2) major peaks, which indicates an enhancement of the film crystalliNity at high temperature annealing of 650 °C. The samples show higher transmittance of more than 90% at 470 nm after annealing which is suitable for blue light emitting diode (LED) application. The optical energy bandgap is shifted from 3.51 to 3.65 eV for the Ni/ITO film after annealing at 650 °C. In addition, increasing the annealing temperature improves the film electrical properties. The resistivity value decreases from 3.77 × 10 −5  Ω cm to 1.09 × 10 −6  Ω cm upon increasing annealing temperature.

  • Study of Annealed Nickel (Ni)/Indium Tin Oxide (ITO) Nanostructures Prepared by RF Magnetron Sputtering
    Advanced Materials Research, 2013
    Co-Authors: M. Sobri, Ahmad Shuhaimi, K.m. Hakim, Mohamad Hafiz Mamat, S. Najwa, M. Mazwan, N. Ameera, M.z. Musa, M. Rusop
    Abstract:

    Nickel (Ni) / indium tin oxide (ITO) nanostructures were deposited on glass and silicon (111) substrates by RF magnetron sputtering using a Nickel target and ITO (In-Sn, 90%-10%) targets. The post-deposition annealing has been performed for Ni/ITO films in air and the effect of annealing temperature on the electrical, optical and structural properties on ITO films was studied. We found the appearance of (411) and (622) peaks in addition to (400) and (222) major peaks, which indicates an improvement of the film crystalliNity at high annealing temperature of 650°C. The samples show higher transmittance of more than 90% at 460 nm after annealing. In addition, increasing the annealing temperatures also improve the film electrical properties. The resistivity decreases to 6.67×10-6 Ωcm when annealed at 500°C as opposed to 6.75×10-5 Ωcm in as-deposited film.

  • Effect of Annealing on Surface of Nickel (Ni)/Indium Tin Oxide (ITO) Nanostructures Measured by Atomic Force Microscopy (AFM)
    Advanced Materials Research, 2013
    Co-Authors: M. Sobri, Ahmad Shuhaimi, K.m. Hakim, Mohamad Hafiz Mamat, S. Najwa, M. Mazwan, N. Ameera, M.z. Musa, M. Rusop
    Abstract:

    Nickel (Ni) / indium tin oxide (ITO) nanostructures were deposited on silicon (111) substrate by RF magnetron sputtering using a Nickel target and metallic alloy target (In-Sn, 90%-10%). The post-deposition annealing has been done for Ni/ITO films in air and the effect of annealing temperature on the surface morphology of ITO films was studied. It has been found that the annealing temperatures increase the film surface roughness in Ni/ITO structure. At annealing temperature of 600°C, AFM analysis reveals the highest root mean square roughness, peak to valley and thickness value of 2.598 nm, 59.115 nm, and 11.358 nm, respectively. Watershed analysis on AFM images show that the numbers of grain boundaries in Ni/ITO are reduced when annealing temperature is increased to higher temperatures.

Hongjun Lin - One of the best experts on this subject based on the ideXlab platform.

  • Electric field endowing the conductive polyvinylidene fluoride (PVDF)-graphene oxide (GO)‑Nickel (Ni) membrane with high-efficient performance for dye wastewater treatment
    Applied Surface Science, 2019
    Co-Authors: Yuqing Zhao, Ying Liu, Tianyu Sun, Liguo Shen, Hongjun Lin
    Abstract:

    Abstract Due to potential toxicity of the dyes and their visibility even at the very low concentration, treatment of dye wastewater has been a matter of considerable interest. Membrane technology is an emerging technology that offers a promising way to remove dyes from wastewater. However, the membrane fouling and trade-off effect severely hinder the removal efficiency. In view of this, the conductive polyvinylidene fluoride (PVDF)-graphene oxide (GO)‑Nickel (Ni) composite membrane was firstly developed and implanted into the dead-end filtration cell as the cathode in the sandwich-like electrode. Under the assistance of electric field, the conductive PVDF-GO-Ni membrane displayed 98.02% Congo red (CR) rejection with the flux of 38.39 L·m−2·h−1·bar−1, which was an encouraging result comparing to most previous reports. Moreover, PVDF-GO-Ni membrane possessed certain antibacterial ability and super anti-adhesion ability to CR molecules. The underlying mechaNism of super anti-adhesion of CR molecules was investigated by quantitatively calculating the interfacial interaction energy according to the extended Derjaguin–Landau–Verwey–Overbeek (XDLVO) theory. XDLVO theory indicated that the repulsive acid-based (AB) interaction energy between CR molecules and membrane surface predominantly facilitated the super anti-adhesion ability of the hydrophilic PVDF-GO-Ni membrane. The present study not only supplied a novel PVDF-GO-Ni membrane for high-efficient treatment of dye waste water, but also built an approach to quantitatively calculate interfacial interaction energy which should have a wide applications in forecasting and directing the modifications of separation membranes.

M. Sobri - One of the best experts on this subject based on the ideXlab platform.

  • Structural and optical properties of Nickel (Ni)/indium tin oxide (ITO) thin-films deposited by RF magnetron sputtering
    Advanced Materials Research, 2014
    Co-Authors: M. Sobri, Ahmad Shuhaimi, K.m. Hakim, Mohamad Hafiz Mamat, S. Najwa, M. Mazwan, N. Ameera, M.z. Musa, M. Rusop
    Abstract:

    Nickel (Ni)/ indium tin oxide (ITO) thin-films have been deposited on silicon (Si) and glass substrates using radio-frequency (RF) magnetron sputtering at 200°C temperature. ITO layer was deposited on top of Ni layer with various deposition parameter. The material and optical properties of the ITO samples with and without Ni seed layer were analyzed. X-ray diffraction studies shows that the films are crystalline with the typical ITO diffraction peaks of (222), (400) and (411). The FESEM and AFM images shows that the grains have uNiform shapes and sizes. FESEM results reveal that the grain size along the sample surface decreases when the Ni seed layer is added. Both the samples shows higher transmittance of more than 95% in UV-vis spectrometer.

  • Effect of annealing on structural, optical, and electrical properties of Nickel (Ni)/indium tin oxide (ITO) nanostructures prepared by RF magnetron sputtering
    Superlattices and Microstructures, 2014
    Co-Authors: M. Sobri, Ahmad Shuhaimi, K.m. Hakim, Mohamad Hafiz Mamat, S. Najwa, M. Mazwan, N. Ameera, V. Ganesh, Y. Yusnizam, M. Rusop
    Abstract:

    Abstract Nickel (Ni)/indium tin oxide (ITO) nanostructures were deposited on glass and silicon (1 1 1) substrates by RF magnetron sputtering using Nickel and ITO (In–Sn, 90–10%) targets. The post-deposition annealing has been performed for Ni/ITO films in air. The effect of annealing temperature on the electrical, optical and structural properties of ITO films was studied. We found the appearance of (6 2 2) peak in addition to (4 0 0) and (2 2 2) major peaks, which indicates an enhancement of the film crystalliNity at high temperature annealing of 650 °C. The samples show higher transmittance of more than 90% at 470 nm after annealing which is suitable for blue light emitting diode (LED) application. The optical energy bandgap is shifted from 3.51 to 3.65 eV for the Ni/ITO film after annealing at 650 °C. In addition, increasing the annealing temperature improves the film electrical properties. The resistivity value decreases from 3.77 × 10 −5  Ω cm to 1.09 × 10 −6  Ω cm upon increasing annealing temperature.

  • Study of Annealed Nickel (Ni)/Indium Tin Oxide (ITO) Nanostructures Prepared by RF Magnetron Sputtering
    Advanced Materials Research, 2013
    Co-Authors: M. Sobri, Ahmad Shuhaimi, K.m. Hakim, Mohamad Hafiz Mamat, S. Najwa, M. Mazwan, N. Ameera, M.z. Musa, M. Rusop
    Abstract:

    Nickel (Ni) / indium tin oxide (ITO) nanostructures were deposited on glass and silicon (111) substrates by RF magnetron sputtering using a Nickel target and ITO (In-Sn, 90%-10%) targets. The post-deposition annealing has been performed for Ni/ITO films in air and the effect of annealing temperature on the electrical, optical and structural properties on ITO films was studied. We found the appearance of (411) and (622) peaks in addition to (400) and (222) major peaks, which indicates an improvement of the film crystalliNity at high annealing temperature of 650°C. The samples show higher transmittance of more than 90% at 460 nm after annealing. In addition, increasing the annealing temperatures also improve the film electrical properties. The resistivity decreases to 6.67×10-6 Ωcm when annealed at 500°C as opposed to 6.75×10-5 Ωcm in as-deposited film.

  • Effect of Annealing on Surface of Nickel (Ni)/Indium Tin Oxide (ITO) Nanostructures Measured by Atomic Force Microscopy (AFM)
    Advanced Materials Research, 2013
    Co-Authors: M. Sobri, Ahmad Shuhaimi, K.m. Hakim, Mohamad Hafiz Mamat, S. Najwa, M. Mazwan, N. Ameera, M.z. Musa, M. Rusop
    Abstract:

    Nickel (Ni) / indium tin oxide (ITO) nanostructures were deposited on silicon (111) substrate by RF magnetron sputtering using a Nickel target and metallic alloy target (In-Sn, 90%-10%). The post-deposition annealing has been done for Ni/ITO films in air and the effect of annealing temperature on the surface morphology of ITO films was studied. It has been found that the annealing temperatures increase the film surface roughness in Ni/ITO structure. At annealing temperature of 600°C, AFM analysis reveals the highest root mean square roughness, peak to valley and thickness value of 2.598 nm, 59.115 nm, and 11.358 nm, respectively. Watershed analysis on AFM images show that the numbers of grain boundaries in Ni/ITO are reduced when annealing temperature is increased to higher temperatures.

Ahmed E. Fahmy - One of the best experts on this subject based on the ideXlab platform.

  • Effect of urea fertilization on growth of broad bean (Vicia faba L.) under various Nickel (Ni) levels with or without acetic acid addition, using 15N-labeled fertilizer.
    Environmental geochemistry and health, 2020
    Co-Authors: Mostafa Zhran, Ahmed Moursy, Tin Mar Lynn, Ahmed E. Fahmy
    Abstract:

    Although Nickel (Ni) has direct relationship with Nitrogen metabolism of plants, the high dose of Ni fertilizer in broad bean plants may affect the Nitrogen use efficiency (NUE), impair plant development and even cause Ni pollution in soil. Thus, a pot experiment was set up to study the effect of urea fertilization on N-uptake, root and shoots' Ni content as well as growth of broad bean plants under different levels of Ni, using 15N tracer techNique. 15N-labeled urea (5% 15N atom excess) was added at three doses (0, 30 and 60 mg N kg-1 soil). Nickel sulfate (NiSO4) was also applied at three levels (0, 50 and 100 mg Ni kg-1 soil). The experiment was laid out with or without acetic acid in randomized complete block design in three replicates. Treatment with the addition of 60 mg N + 50 mg Ni showed the highest values in dry weights of root and shoots, N-uptake by shoots, Nitrogen derived from fertilizer (Ndff %) and NUE % by shoots in both with or without acetic acid solution. Higher rate of Ni addition can decrease shoot and root biomass by inhibiting the ability of the plant to uptake the Nitrogen efficiently. However, addition of acetic acid solution induced the improvement of NUE % and Ndff % by shoot and root of broad bean plants. This study provides insight into how to improve plant yield without damaging the soil health and will be helpful to create a better world with sustainable agriculture.

Yaping Hsieh - One of the best experts on this subject based on the ideXlab platform.