The Experts below are selected from a list of 93726 Experts worldwide ranked by ideXlab platform
Shuai Liu - One of the best experts on this subject based on the ideXlab platform.
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configurable ultra low Operating Voltage resistive switching between bipolar and threshold behaviors for ag taox pt structures
Applied Physics Letters, 2018Co-Authors: Xu Huang, Kangan Jiang, Yiru Niu, Renzhi Wang, Diyuan Zheng, Anhua Dong, Xinyuan Dong, Chunlian Mei, Shuai LiuAbstract:An ultra-low Operating Voltage bipolar resistive switching is observed in Ag/TaOx/Pt devices. They show a typical bipolar resistive switching with both low Operating Voltages and high cycling endurance when the compliance current (ICC) is 0.3 mA. Moreover, the Operating Voltage is considerably influenced by the grain size of the film. The VForming increases dramatically when the grain size exceeds a critical value. Meanwhile, the bipolar resistive switching and threshold switching in Ag/TaOx/Pt devices can be converted to each other by changing the magnitude of the ICC. Finally, a model based on the migration of Ag+ is proposed to explain the ultra-low Operating Voltage and the critical effect of grain size. The model is proved by simulation. These findings may lead to ultra-low power memories and contribute to a further understanding of the resistive switching effect.An ultra-low Operating Voltage bipolar resistive switching is observed in Ag/TaOx/Pt devices. They show a typical bipolar resistive switching with both low Operating Voltages and high cycling endurance when the compliance current (ICC) is 0.3 mA. Moreover, the Operating Voltage is considerably influenced by the grain size of the film. The VForming increases dramatically when the grain size exceeds a critical value. Meanwhile, the bipolar resistive switching and threshold switching in Ag/TaOx/Pt devices can be converted to each other by changing the magnitude of the ICC. Finally, a model based on the migration of Ag+ is proposed to explain the ultra-low Operating Voltage and the critical effect of grain size. The model is proved by simulation. These findings may lead to ultra-low power memories and contribute to a further understanding of the resistive switching effect.
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Configurable ultra-low Operating Voltage resistive switching between bipolar and threshold behaviors for Ag/TaOx/Pt structures
Applied Physics Letters, 2018Co-Authors: Xu Huang, Kangan Jiang, Yiru Niu, Renzhi Wang, Diyuan Zheng, Anhua Dong, Xinyuan Dong, Chunlian Mei, Shuai LiuAbstract:An ultra-low Operating Voltage bipolar resistive switching is observed in Ag/TaOx/Pt devices. They show a typical bipolar resistive switching with both low Operating Voltages and high cycling endurance when the compliance current (ICC) is 0.3 mA. Moreover, the Operating Voltage is considerably influenced by the grain size of the film. The VForming increases dramatically when the grain size exceeds a critical value. Meanwhile, the bipolar resistive switching and threshold switching in Ag/TaOx/Pt devices can be converted to each other by changing the magnitude of the ICC. Finally, a model based on the migration of Ag+ is proposed to explain the ultra-low Operating Voltage and the critical effect of grain size. The model is proved by simulation. These findings may lead to ultra-low power memories and contribute to a further understanding of the resistive switching effect.An ultra-low Operating Voltage bipolar resistive switching is observed in Ag/TaOx/Pt devices. They show a typical bipolar resistive switching with both low Operating Voltages and high cycling endurance when the compliance current (ICC) is 0.3 mA. Moreover, the Operating Voltage is considerably influenced by the grain size of the film. The VForming increases dramatically when the grain size exceeds a critical value. Meanwhile, the bipolar resistive switching and threshold switching in Ag/TaOx/Pt devices can be converted to each other by changing the magnitude of the ICC. Finally, a model based on the migration of Ag+ is proposed to explain the ultra-low Operating Voltage and the critical effect of grain size. The model is proved by simulation. These findings may lead to ultra-low power memories and contribute to a further understanding of the resistive switching effect.
Jinbo Bai - One of the best experts on this subject based on the ideXlab platform.
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high performance zno ag nanowire zno composite film uv photodetectors with large area and low Operating Voltage
Journal of Materials Chemistry C, 2014Co-Authors: Zhi Yang, Minqiang Wang, Xiaohui Song, Guodong Yan, Yucheng Ding, Jinbo BaiAbstract:A simple and low-cost solution-processed method is used to fabricate ZnO/Ag nanowire/ZnO composite UV photodetectors with a large area of 4 × 5 mm2, low Operating Voltage of 1 V and high visible transmittance of 75%. Due to the low-dimensionality confinement ability and small persistent photoconductivity effect in polycrystalline ZnO nanoparticle thin films and excellent conductivity of Ag nanowire networks, composite UV photodetectors exhibit a high on/off ratio and short response time under high light illumination, while exhibiting large detectivity and responsivity under low light illumination. Compared with traditional polycrystalline ZnO thin films, the formation of a large number of Ohmic contacts between ZnO nanoparticles and Ag nanowires in a composite structure greatly improves the extraction number and shortens the extraction time of photoelectrons. Additionally, both Schottky contact and Ohmic contact at the electrode interface can obtain a high on/off ratio and short response time. Our composite structure device is regarded as a compromise between high-performance with large-area, low-Voltage and low-cost. It has many advantages compared with its counterparts include ZnO nanowires, and other ZnO composites, which is very promising in UV photodetective applications.
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High-performance ZnO/Ag Nanowire/ZnO composite film UV photodetectors with large area and low Operating Voltage
Journal of Materials Chemistry C, 2014Co-Authors: Zhi Yang, Minqiang Wang, Xiaohui Song, Yucheng Ding, Jinbo BaiAbstract:A simple and low-cost solution-processed method is used to fabricate ZnO/Ag nanowire/ZnO composite UV photodetectors with a large area of 4 × 5 mm2, low Operating Voltage of 1 V and high visible transmittance of 75%. Due to the low-dimensionality confinement ability and small persistent photoconductivity effect in polycrystalline ZnO nanoparticle thin films and excellent conductivity of Ag nanowire networks, composite UV photodetectors exhibit a high on/off ratio and short response time under high light illumination, while exhibiting large detectivity and responsivity under low light illumination. Compared with traditional polycrystalline ZnO thin films, the formation of a large number of Ohmic contacts between ZnO nanoparticles and Ag nanowires in a composite structure greatly improves the extraction number and shortens the extraction time of photoelectrons. Additionally, both Schottky contact and Ohmic contact at the electrode interface can obtain a high on/off ratio and short response time. Our composite structure device is regarded as a compromise between high-performance with large-area, low-Voltage and low-cost. It has many advantages compared with its counterparts include ZnO nanowires, and other ZnO composites, which is very promising in UV photodetective applications..
Fred J Towler - One of the best experts on this subject based on the ideXlab platform.
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an sram design in 65 nm technology node featuring read and write assist circuits to expand Operating Voltage
IEEE Journal of Solid-state Circuits, 2007Co-Authors: Harold Pilo, George M Braceras, C Browning, Steven H Lamphier, C Barwin, Fred J TowlerAbstract:This paper describes a 32-Mb SRAM that has been designed and fabricated in a 65-nm low-power CMOS Technology. The 62-mm2 die features read-assist and write-assist circuit techniques that expand the Operating Voltage range and improve manufacturability across technology platforms. Hardware measurements demonstrate the fail-count improvements achieved by integrating these techniques. The decrease in fail-count provides a 100-mV improvement of VDDMIN during the read operation. Write operations are also improved, especially with weak NFET cell transistors. The circuit techniques have been replicated on a 72-Mb stand-alone standard SRAM product where the area overhead from the additional circuits is approximately 4%. The 32-Mb SRAM has also been successfully migrated to other yield-learning SRAMs in 45-nm bulk and SOI technologies with minimum circuit changes
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an sram design in 65nm and 45nm technology nodes featuring read and write assist circuits to expand Operating Voltage
Symposium on VLSI Circuits, 2006Co-Authors: Harold Pilo, John E Barwin, George M Braceras, C Browning, S Burns, John A Gabric, Steven H Lamphier, M Miller, Alan L Roberts, Fred J TowlerAbstract:This paper describes a 32Mb SRAM that has been designed and fabricated in a 65nm low-power CMOS technology. The design has also been migrated to 45nm bulk and SOI technologies. The 68mm die features read and write-assist circuit techniques that expand the Operating Voltage range and improve manufacturability across technology platforms
Zhi Yang - One of the best experts on this subject based on the ideXlab platform.
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high performance zno ag nanowire zno composite film uv photodetectors with large area and low Operating Voltage
Journal of Materials Chemistry C, 2014Co-Authors: Zhi Yang, Minqiang Wang, Xiaohui Song, Guodong Yan, Yucheng Ding, Jinbo BaiAbstract:A simple and low-cost solution-processed method is used to fabricate ZnO/Ag nanowire/ZnO composite UV photodetectors with a large area of 4 × 5 mm2, low Operating Voltage of 1 V and high visible transmittance of 75%. Due to the low-dimensionality confinement ability and small persistent photoconductivity effect in polycrystalline ZnO nanoparticle thin films and excellent conductivity of Ag nanowire networks, composite UV photodetectors exhibit a high on/off ratio and short response time under high light illumination, while exhibiting large detectivity and responsivity under low light illumination. Compared with traditional polycrystalline ZnO thin films, the formation of a large number of Ohmic contacts between ZnO nanoparticles and Ag nanowires in a composite structure greatly improves the extraction number and shortens the extraction time of photoelectrons. Additionally, both Schottky contact and Ohmic contact at the electrode interface can obtain a high on/off ratio and short response time. Our composite structure device is regarded as a compromise between high-performance with large-area, low-Voltage and low-cost. It has many advantages compared with its counterparts include ZnO nanowires, and other ZnO composites, which is very promising in UV photodetective applications.
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High-performance ZnO/Ag Nanowire/ZnO composite film UV photodetectors with large area and low Operating Voltage
Journal of Materials Chemistry C, 2014Co-Authors: Zhi Yang, Minqiang Wang, Xiaohui Song, Yucheng Ding, Jinbo BaiAbstract:A simple and low-cost solution-processed method is used to fabricate ZnO/Ag nanowire/ZnO composite UV photodetectors with a large area of 4 × 5 mm2, low Operating Voltage of 1 V and high visible transmittance of 75%. Due to the low-dimensionality confinement ability and small persistent photoconductivity effect in polycrystalline ZnO nanoparticle thin films and excellent conductivity of Ag nanowire networks, composite UV photodetectors exhibit a high on/off ratio and short response time under high light illumination, while exhibiting large detectivity and responsivity under low light illumination. Compared with traditional polycrystalline ZnO thin films, the formation of a large number of Ohmic contacts between ZnO nanoparticles and Ag nanowires in a composite structure greatly improves the extraction number and shortens the extraction time of photoelectrons. Additionally, both Schottky contact and Ohmic contact at the electrode interface can obtain a high on/off ratio and short response time. Our composite structure device is regarded as a compromise between high-performance with large-area, low-Voltage and low-cost. It has many advantages compared with its counterparts include ZnO nanowires, and other ZnO composites, which is very promising in UV photodetective applications..
Xu Huang - One of the best experts on this subject based on the ideXlab platform.
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configurable ultra low Operating Voltage resistive switching between bipolar and threshold behaviors for ag taox pt structures
Applied Physics Letters, 2018Co-Authors: Xu Huang, Kangan Jiang, Yiru Niu, Renzhi Wang, Diyuan Zheng, Anhua Dong, Xinyuan Dong, Chunlian Mei, Shuai LiuAbstract:An ultra-low Operating Voltage bipolar resistive switching is observed in Ag/TaOx/Pt devices. They show a typical bipolar resistive switching with both low Operating Voltages and high cycling endurance when the compliance current (ICC) is 0.3 mA. Moreover, the Operating Voltage is considerably influenced by the grain size of the film. The VForming increases dramatically when the grain size exceeds a critical value. Meanwhile, the bipolar resistive switching and threshold switching in Ag/TaOx/Pt devices can be converted to each other by changing the magnitude of the ICC. Finally, a model based on the migration of Ag+ is proposed to explain the ultra-low Operating Voltage and the critical effect of grain size. The model is proved by simulation. These findings may lead to ultra-low power memories and contribute to a further understanding of the resistive switching effect.An ultra-low Operating Voltage bipolar resistive switching is observed in Ag/TaOx/Pt devices. They show a typical bipolar resistive switching with both low Operating Voltages and high cycling endurance when the compliance current (ICC) is 0.3 mA. Moreover, the Operating Voltage is considerably influenced by the grain size of the film. The VForming increases dramatically when the grain size exceeds a critical value. Meanwhile, the bipolar resistive switching and threshold switching in Ag/TaOx/Pt devices can be converted to each other by changing the magnitude of the ICC. Finally, a model based on the migration of Ag+ is proposed to explain the ultra-low Operating Voltage and the critical effect of grain size. The model is proved by simulation. These findings may lead to ultra-low power memories and contribute to a further understanding of the resistive switching effect.
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Configurable ultra-low Operating Voltage resistive switching between bipolar and threshold behaviors for Ag/TaOx/Pt structures
Applied Physics Letters, 2018Co-Authors: Xu Huang, Kangan Jiang, Yiru Niu, Renzhi Wang, Diyuan Zheng, Anhua Dong, Xinyuan Dong, Chunlian Mei, Shuai LiuAbstract:An ultra-low Operating Voltage bipolar resistive switching is observed in Ag/TaOx/Pt devices. They show a typical bipolar resistive switching with both low Operating Voltages and high cycling endurance when the compliance current (ICC) is 0.3 mA. Moreover, the Operating Voltage is considerably influenced by the grain size of the film. The VForming increases dramatically when the grain size exceeds a critical value. Meanwhile, the bipolar resistive switching and threshold switching in Ag/TaOx/Pt devices can be converted to each other by changing the magnitude of the ICC. Finally, a model based on the migration of Ag+ is proposed to explain the ultra-low Operating Voltage and the critical effect of grain size. The model is proved by simulation. These findings may lead to ultra-low power memories and contribute to a further understanding of the resistive switching effect.An ultra-low Operating Voltage bipolar resistive switching is observed in Ag/TaOx/Pt devices. They show a typical bipolar resistive switching with both low Operating Voltages and high cycling endurance when the compliance current (ICC) is 0.3 mA. Moreover, the Operating Voltage is considerably influenced by the grain size of the film. The VForming increases dramatically when the grain size exceeds a critical value. Meanwhile, the bipolar resistive switching and threshold switching in Ag/TaOx/Pt devices can be converted to each other by changing the magnitude of the ICC. Finally, a model based on the migration of Ag+ is proposed to explain the ultra-low Operating Voltage and the critical effect of grain size. The model is proved by simulation. These findings may lead to ultra-low power memories and contribute to a further understanding of the resistive switching effect.
