The Experts below are selected from a list of 297 Experts worldwide ranked by ideXlab platform
Jae Sung Lee - One of the best experts on this subject based on the ideXlab platform.
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Photoelectrochemical Water Splitting with p‐Type Metal Oxide Semiconductor Photocathodes
ChemSusChem, 2019Co-Authors: Youn Jeong Jang, Jae Sung LeeAbstract:Photoelectrochemical (PEC) water splitting is a promising way to produce clean and sustainable hydrogen fuel. Solar hydrogen production by using p-type metal Oxide Semiconductor photocathodes has not been studied as extensively as that with n-type metal Oxide Semiconductor photoanodes and p-type photovoltaic-grade non-Oxide Semiconductor photocathodes. Copper-based Oxide photocathodes show relatively good conductivity, but suffer from instability in aqueous solution under illumination, whereas iron-based metal Oxide photocathodes demonstrate more stable PEC performance but have problems in charge separation and transport. Herein, an overview of recent progress in p-type metal Oxide-based photocathodes for PEC water reduction is provided. Although these materials have not been fully developed to reach their potential performance, the challenges involved have been identified and strategies to overcome these limitations have been proposed. Future research in this field should address these issues and challenges in addition to the discovery of new materials.
Kazuo Nakazato - One of the best experts on this subject based on the ideXlab platform.
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A memory cell with single-electron and metal-Oxide-Semiconductor transistor integration
Applied Physics Letters, 1999Co-Authors: Zahid A. K. Durrani, A. C. Irvine, Haroon Ahmed, Kazuo NakazatoAbstract:A single-electron transistor memory cell with metal-Oxide-Semiconductor field-effect transistor sensing has been fabricated in silicon-on-insulator material. The single-electron transistor, coupled to a memory node, is defined in the upper silicon layer. The memory node forms the gate of a metal-Oxide-Semiconductor field-effect transistor with its channel in the substrate silicon. At 4.2 K, there are two different states of the memory-node voltage, separated by the single-electron transistor Coulomb gap. These states are sensed at high-current output levels by the metal-Oxide-Semiconductor transistor. The metal-Oxide-Semiconductor transistor current also shows evidence of gate-dependent conductance oscillations in the coupled single-electron transistor.
Yuki Nishi - One of the best experts on this subject based on the ideXlab platform.
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Cu2O-based heterojunction solar cells with an Al-doped ZnO/Oxide Semiconductor/thermally oxidized Cu2O sheet structure
Solar Energy, 2014Co-Authors: Tadatsugu Minami, Toshihiro Miyata, Yuki NishiAbstract:Abstract This paper introduces the present status and prospects for further development of Al-doped ZnO (AZO)/n-type metal Oxide Semiconductor/p-type Cu 2 O hybrid heterojunction (HbH) solar cells that feature a structure that is fabricated by inserting an n-Oxide Semiconductor thin film between an AZO transparent electrode and a Cu 2 O sheet. An improvement of photovoltaic properties was achieved by both stabilizing the surface of polycrystalline p-Cu 2 O sheets that had been prepared by thermal oxidization of Cu sheets and also developing low-temperature and low-damage deposition technology for applying thin films as an n-Oxide Semiconductor layer. It should be noted that the obtainable photovoltaic properties in AZO/Oxide Semiconductor/Cu 2 O HbH solar cells were found to be considerably more affected by the surface condition of the p-Cu 2 O layer, i.e. , the interface at the heterojunction, than the diffusion potential resulting from the difference of work functions between the p-Cu 2 O and n-Oxide Semiconductor layers. To achieve a higher efficiency in AZO/n-Oxide Semiconductor/p-Cu 2 O HbH solar cells, it was necessary to improve the interface at the heterojunction as well as reduce the series resistance and increase the parallel resistance of the HbH solar cells. The effect of the inserted n-Oxide Semiconductor thin film on the obtainable photovoltaic properties was investigated in the Cu 2 O-based HbH solar cells by inserting various kinds of n-Oxide Semiconductor thin films prepared under various deposition conditions using a pulsed laser deposition (PLD) method. Although either a nondoped ZnO or Ga 2 O 3 thin film deposited at room temperature by PLD is suitable as the n-Oxide Semiconductor layer, an amorphous Ga 2 O 3 thin film with a high resistivity was found to be the most suitable Oxide. The improvement of the p–n junction, as seen in the Ga 2 O 3 /Cu 2 O heterojunction, could be achieved by decreasing the defect levels at the interface, which decreases not only the recombination associated with defects at the interface between the Ga 2 O 3 and Cu 2 O, but also the conduction band discontinuity. We have achieved a maximum conversion efficiency of 5.38% in an AZO/Ga 2 O 3 /Cu 2 O heterojunction solar cell fabricated by depositing a Ga 2 O 3 thin film on a Cu 2 O sheet with a resistivity on the order of 10 2 Ω cm.
Y Y Chen - One of the best experts on this subject based on the ideXlab platform.
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Narrow-band metal-Oxide-Semiconductor photodetector
Applied Physics Letters, 2009Co-Authors: W.s Ho, T.-h. Cheng, Y Y ChenAbstract:Si-based photodetectors for narrow-band ultraviolet light (319 nm) and green light (500 nm) detection are demonstrated using a metal-Oxide-Semiconductor tunneling structure. By using appropriate selection of gate metal, the metal-Oxide-Semiconductor tunneling diode can detect specific range of light. Due to the spectral dependence of absorption and reflection of the Ag and Au as gate electrodes, the narrow-band detection of ultraviolet and green light can be achieved, respectively. The photodetectors with 130 nm thick Ag gate and 70 nm thick Au gate exhibit peak responsivities of 5.1 and 0.3 mA/W at 319 and 500 nm, respectively.
Tso-ping Ma - One of the best experts on this subject based on the ideXlab platform.
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Properties of InAs metal-Oxide-Semiconductor structures with atomic-layer-deposited Al2O3 Dielectric
Applied Physics Letters, 2008Co-Authors: Ning Li, Eric S. Harmon, James T. Hyland, David B. Salzman, Tso-ping Ma, Yi Xuan, P. D. YeAbstract:InAs is very attractive as a channel material for high-speed metal-Oxide-Semiconductor (MOS) field-effect transistors due to its very high electron mobility and saturation velocity. We investigated the processing conditions and the interface properties of an InAs metal-Oxide-Semiconductor structure with Al2O3 dielectric deposited by atomic-layer deposition. The MOS capacitor I-V and C-V characteristics were studied and discussed. Simple field-effect transistors fabricated on an InAs bulk material without source/drain implantation were measured and analyzed.
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Tunneling spectroscopy of the silicon metal-Oxide-Semiconductor system
Characterization and Metrology for ULSI Technology, 1998Co-Authors: Tso-ping Ma, R. C. Barker, John Kuehne, Yin Hu, Eiji Hasegawa, David C. FrystakAbstract:In this work we demonstrate the application of tunneling spectroscopy to the silicon Metal-Oxide-Semiconductor system. As an electrical characterization method, this technique allows for the direct study of the structure of ultra-thin gate Oxides in standard as-fabricated test structures, and their dependence upon processing and electrical stress.
