Pentacarbonyliron

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W. T. Tsang - One of the best experts on this subject based on the ideXlab platform.

  • Semi‐insulating InP grown by chemical beam epitaxy with Pentacarbonyliron doping
    Applied Physics Letters, 1995
    Co-Authors: J D Walker, W. T. Tsang
    Abstract:

    We present semi‐insulating iron‐doped InP grown by chemical beam epitaxy using the gaseous source Pentacarbonyliron, Fe(CO)5. Analysis by secondary ion mass spectroscopy shows that iron incorporation is proportional to the Fe(CO)5 flow rate over the 5×1017–5×1019 cm−3 range studied. Use of Fe(CO)5 as an iron source also leads to high ∼1018 cm−3 carbon incorporation in the material, but this does not interfere with semi‐insulating behavior. The material shows 30 MΩ cm resistivity for a broad range of Fe(CO)5 flow rates. No oxygen incorporation was observed

  • semi insulating inp grown by chemical beam epitaxy with Pentacarbonyliron doping
    Applied Physics Letters, 1995
    Co-Authors: J D Walker, W. T. Tsang
    Abstract:

    We present semi‐insulating iron‐doped InP grown by chemical beam epitaxy using the gaseous source Pentacarbonyliron, Fe(CO)5. Analysis by secondary ion mass spectroscopy shows that iron incorporation is proportional to the Fe(CO)5 flow rate over the 5×1017–5×1019 cm−3 range studied. Use of Fe(CO)5 as an iron source also leads to high ∼1018 cm−3 carbon incorporation in the material, but this does not interfere with semi‐insulating behavior. The material shows 30 MΩ cm resistivity for a broad range of Fe(CO)5 flow rates. No oxygen incorporation was observed

  • Pentacarbonyliron doping for semi-insulating InP by chemical beam epitaxy
    Indium Phosphide and Related Materials, 1995. Conference Proceedings., Seventh International Conference on, 1995
    Co-Authors: W. T. Tsang, J D Walker
    Abstract:

    We present semi-insulating iron-doped InP grown by chemical beam epitaxy using the gaseous iron Fe(CO)5. SIMS analysis shows that iron incorporation is proportional to the Fe(CO)5 flow rate over the 5×1017-5×1019 cm-3 range studied. Use of Fe(CO)5 as an iron source also leads to high αp 1018 cm-3 carbon incorporation in the material, but this does not interfere with semi-insulating behavior. The material shows 30 MΩ-cm resistivity for a broad range of Fe(CO)5 flow rates

J D Walker - One of the best experts on this subject based on the ideXlab platform.

  • Semi‐insulating InP grown by chemical beam epitaxy with Pentacarbonyliron doping
    Applied Physics Letters, 1995
    Co-Authors: J D Walker, W. T. Tsang
    Abstract:

    We present semi‐insulating iron‐doped InP grown by chemical beam epitaxy using the gaseous source Pentacarbonyliron, Fe(CO)5. Analysis by secondary ion mass spectroscopy shows that iron incorporation is proportional to the Fe(CO)5 flow rate over the 5×1017–5×1019 cm−3 range studied. Use of Fe(CO)5 as an iron source also leads to high ∼1018 cm−3 carbon incorporation in the material, but this does not interfere with semi‐insulating behavior. The material shows 30 MΩ cm resistivity for a broad range of Fe(CO)5 flow rates. No oxygen incorporation was observed

  • semi insulating inp grown by chemical beam epitaxy with Pentacarbonyliron doping
    Applied Physics Letters, 1995
    Co-Authors: J D Walker, W. T. Tsang
    Abstract:

    We present semi‐insulating iron‐doped InP grown by chemical beam epitaxy using the gaseous source Pentacarbonyliron, Fe(CO)5. Analysis by secondary ion mass spectroscopy shows that iron incorporation is proportional to the Fe(CO)5 flow rate over the 5×1017–5×1019 cm−3 range studied. Use of Fe(CO)5 as an iron source also leads to high ∼1018 cm−3 carbon incorporation in the material, but this does not interfere with semi‐insulating behavior. The material shows 30 MΩ cm resistivity for a broad range of Fe(CO)5 flow rates. No oxygen incorporation was observed

  • Pentacarbonyliron doping for semi-insulating InP by chemical beam epitaxy
    Indium Phosphide and Related Materials, 1995. Conference Proceedings., Seventh International Conference on, 1995
    Co-Authors: W. T. Tsang, J D Walker
    Abstract:

    We present semi-insulating iron-doped InP grown by chemical beam epitaxy using the gaseous iron Fe(CO)5. SIMS analysis shows that iron incorporation is proportional to the Fe(CO)5 flow rate over the 5×1017-5×1019 cm-3 range studied. Use of Fe(CO)5 as an iron source also leads to high αp 1018 cm-3 carbon incorporation in the material, but this does not interfere with semi-insulating behavior. The material shows 30 MΩ-cm resistivity for a broad range of Fe(CO)5 flow rates

Hans-joachim Knölker - One of the best experts on this subject based on the ideXlab platform.

Peter G. Jones - One of the best experts on this subject based on the ideXlab platform.

O. V. Chakhovskaya - One of the best experts on this subject based on the ideXlab platform.