The Experts below are selected from a list of 315 Experts worldwide ranked by ideXlab platform

Hong Zhou - One of the best experts on this subject based on the ideXlab platform.

  • demonstration of a 2 kv al 0 85 ga 0 15 n Schottky Barrier Diode with improved on current and ideality factor
    IEEE Electron Device Letters, 2020
    Co-Authors: Yanni Zhang, Hong Zhou, Jing Ning, Chunfu Zhang, Jincheng Zhang, Shengrui Xu, Kai Cheng, Lei Zhang
    Abstract:

    In this letter, we report on demonstrating a Schottky Barrier Diode (SBD) with high reverse blocking voltage by incorporating an ultra-wide bandgap semiconductor Al0.85 Ga0.15 N channel. Benefited from the lower activation energy of the Si in GaN, the net carrier concentration of Al0.85 Ga0.15N can be essentially enhanced to ${2}\times {10}^{{17}}$ cm−3 level with surface roughness of 0.33 nm. Due to the good material property, a reverse blocking voltage of 2 kV and room temperature ideality factor of 2.3 are demonstrated. Combined with the significantly improved on-current and on/off ratio of more than 106 when compared with other AlN SBDs, Al0.85 Ga0.15 N turns out to be a competitive AlN counterpart by considering the compromise among ultra-wide bandgap, dopant activation, and material property.

  • beveled fluoride plasma treatment for vertical beta ga 2 o 3 Schottky Barrier Diode with high reverse blocking voltage and low turn on voltage
    IEEE Electron Device Letters, 2020
    Co-Authors: Hong Zhou, Qian Feng, Yue Hao, Jincheng Zhang, Kui Dang, Xuanwu Kang, Zhaoqing Feng, Chunyong Zhao, Xusheng Tian, Yachao Zhang
    Abstract:

    In this letter, we report on demonstrating a high performance vertical $\beta $ -Ga2O3 Schottky Barrier Diode (SBD) based on a self-aligned beveled fluorine plasma treatment (BFPT) edge termination structure. Owing to the strong electronegativity of fluorine ions, the fixed negative charges introduced by F ions during self-aligned BFPT process alleviate the electric field crowding, reduce the reverse leakage current and improve the breakdown voltage up to 1 050V even with a low differential on resistance of 2.5 $\text{m}\Omega \cdot $ cm2, combining with a high $I_{\text {on}}/I_{\text {off}}$ of 109, a Schottky Barrier height of 1.03 eV and a low ideality factor of 1.07-1.11.Without implantation and post annealing, the self-aligned BFPT can serve as a simple, effective and viable edge termination technique to fabricate high performance $\beta $ -Ga2O3 rectifiers.

  • high performance vertical beta ga 2 o 3 Schottky Barrier Diode with implanted edge termination
    IEEE Electron Device Letters, 2019
    Co-Authors: Hong Zhou, Qian Feng, Jing Ning, Chunfu Zhang, Yue Hao, Qinglong Yan, Jincheng Zhang, Zhihong Liu, Yanni Zhang, Kui Dang
    Abstract:

    This work reports on implementing Mg implanted Edge Termination (ET), a simple but very useful technique to increase the breakdown voltage (BV) of the vertical $\beta $ -Ga2O3 Schottky Barrier Diode (SBD). With this ET, vertical $\beta $ -Ga2O3 SBD demonstrates a reverse blocking voltage of 1.55 kV and low specific on-resistance ( ${R} _{ \mathrm{\scriptscriptstyle ON},\textrm {sp}}$ ) of 5.1 $\text{m}\Omega \cdot \textrm {cm}^{\textrm {2}}$ at a lightly doped $\beta $ -Ga2O3 layer with epitaxial thickness of $10~\mu \text{m}$ , yielding a high power figure-of-merit (P-FOM) of 0.47 GW/cm2. Combined with high forward current on/off ratio of 108 ~ 109, Schottky Barrier height of 1.01 eV, and ideality factor of 1.05, vertical $\beta $ -Ga2O3 Schottky Diode with implanted ET verifies its great potential for future power rectifiers.

  • field plated lateral beta ga 2 o 3 Schottky Barrier Diode with high reverse blocking voltage of more than 3 kv and high dc power figure of merit of 500 mw cm 2
    IEEE Electron Device Letters, 2018
    Co-Authors: Hong Zhou, Qian Feng, Chunfu Zhang, Jincheng Zhang, Kui Dang, Xuanwu Kang, Yuncong Cai, Zhaoqing Feng, Yangyang Gao, Yue Hao
    Abstract:

    In this letter, we report on demonstrating high-performance field-plated lateral $\beta $ -Ga2O3 Schottky Barrier Diode (SBD) on a sapphire substrate with a reverse blocking voltage of more than 3 kV and a low dc specific ON-resistance ( ${R}_{{ \mathrm{\scriptscriptstyle ON}, \text {sp}}}$ ) of 24.3 $\text{m}\Omega \cdot $ cm2 at an anode–cathode spacing ( ${L}_{\text {AC}}$ ) of $24~\mu \text{m}$ . To the best of our knowledge, this lateral breakdown voltage (BV) >3 kV with dc power figure-of-merit (FOM) >370 MW/cm2 is the highest BV achieved among all the $\beta $ -Ga2O3 SBDs. Meanwhile, lateral $\beta $ -Ga2O3 SBD with ${L}_{\text {AC}} = \text {16}\,\,\mu \text{m}$ also demonstrates a high BV of 2.25 kV and low ${R}_{{ \mathrm{\scriptscriptstyle ON}, \text {sp}}} = \text {10.2}\,\,\text{m}\Omega \cdot $ cm2, yielding a record high dc power FOM of 500 MW/cm2. Combining with 109 high-current ON/OFF ratio, 1.15-eV Schottky Barrier height and 1.25 ideality factor, $\beta $ -Ga2O3 SBD with field-plate structure shows its great promise for power electronics applications.

  • lateral beta ga 2 o 3 Schottky Barrier Diode on sapphire substrate with reverse blocking voltage of 1 7 kv
    IEEE Journal of the Electron Devices Society, 2018
    Co-Authors: Hong Zhou, Qian Feng, Jincheng Zhang, Kui Dang, Yuncong Cai, Zhaoqing Feng, Yangyang Gao, Yue Hao
    Abstract:

    In this paper, we report on achieving the first high performance lateral $\beta $ -Ga2O3 Schottky Barrier Diode (SBD) on sapphire substrate via transferring $\beta $ -Ga2O3 nano-membrane channel from a low dislocation density bulk $\beta $ -Ga2O3 substrate. Non field-plated lateral SBDs with Schottky–Ohmic contact distance of 4, 6, 11, and $15 \mu$ m demonstrate a reverse breakdown voltage (BV) of 0.64, 0.85, 1.2, and 1.7 kV with on resistance ( $R_\text {on}$ ) of 47, 66, 91, and 190 $\omega \cdot $ mm, respectively. This lateral $R_{\text {on}, \text{sp}}$ ~ BV performance is comparable to that of vertical SBDs. Combining with 107 ~ 108 high temperature current on/off ratio, $\beta $ -Ga2O3 SBD shows its great promise for power rectifying once the $\beta $ -Ga2O3 drift layer epitaxial growth becomes more mature.

Kuang Sheng - One of the best experts on this subject based on the ideXlab platform.

  • current collapse free and fast reverse recovery performance in vertical gan on gan Schottky Barrier Diode
    IEEE Transactions on Power Electronics, 2019
    Co-Authors: Shaowen Han, Shu Yang, Kuang Sheng
    Abstract:

    The recent emergence of free-standing GaN substrate has enabled the development of vertical GaN-on-GaN power devices. This letter presents the dynamic on -resistance ( $R_{\text{ON}}$ ) and reverse recovery performance of a novel vertical GaN-on-GaN Schottky Barrier Diode (SBD) characterized by a double pulse tester. The vertical GaN-on-GaN SBD exhibits fast reverse recovery with a low $R_{\text{ON}}$ · $Q_{\rm rr}$ figure-of-merit. For the first time, the current-collapse-free performance (i.e., no dynamic $R_{\text{ON}}$ degradation) has been experimentally verified in a vertical GaN power rectifier under different switching conditions including: off -state stress bias up to 500 V, off -state stress time within 10−6–102 s, high temperature up to 150 °C, and different load current levels.

  • high voltage and high i_ text on i_ text off vertical gan on gan Schottky Barrier Diode with nitridation based termination
    IEEE Electron Device Letters, 2018
    Co-Authors: Shaowen Han, Shu Yang, Kuang Sheng
    Abstract:

    We report a high-performance vertical GaN-on-GaN Schottky Barrier Diode (SBD) with a planar nitridation-based termination (NT) technique. The developed NT-SBD with nearly ideal Schottky contact exhibits a forward current density over kA/cm2, current swing over 1013, and differential specific ON-resistance of 1.2 $\text{m}\Omega \cdot $ cm2. The breakdown voltage is boosted from 335 V for unterminated-SBD to 995 V after termination, whereas a high ON/OFF current ratio ( ${I}_{ \mathrm{\scriptscriptstyle ON}}/{I}_{ \mathrm{\scriptscriptstyle OFF}}$ at −600 V) of ~108 is realized in the NT-SBD. It has been verified that the NT technique can favorably modify GaN surface condition, leading to suppressed leakage current at the junction edge and enhanced breakdown voltage.

  • Silicon carbide Schottky Barrier Diode
    International Journal of High Speed Electronics and Systems, 2005
    Co-Authors: Jian Hui Zhao, Kuang Sheng, Ramon C. Lebron-velilla
    Abstract:

    This chapter reviews the status of SiC Schottky Barrier Diode development. The fundamentals of Schottky Barrier Diodes are first provided, followed by the review of high-voltage SiC Schottky Barrier Diodes, junction-Barrier Schottky Diodes and merged-pin-Schottky Diodes. The development history is reviewed and the key performance parameters are discussed. Applications of SiC SBDs in power electronics circuits as well as other areas such as gas sensors, microwave and UV detections are also presented, followed by discussion of remaining challenges.

Shinichi Shikata - One of the best experts on this subject based on the ideXlab platform.

  • characterization of vertical mo diamond Schottky Barrier Diode from non ideal i v and c v measurements based on mis model
    Diamond and Related Materials, 2013
    Co-Authors: Arie Nawawi, Hitoshi Umezawa, K J Tseng, G A J Amaratunga, Shinichi Shikata
    Abstract:

    Abstract In this study, we investigated non-ideal characteristics of a diamond Schottky Barrier Diode with Molybdenum (Mo) Schottky metal fabricated by Microwave Plasma Chemical Vapour Deposition (MPCVD) technique. Extraction from forward bias I–V and reverse bias C − 2 –V measurements yields ideality factor of 1.3, Schottky Barrier height of 1.872 eV, and on-resistance of 32.63 mΩ·cm 2 . The deviation of extracted Schottky Barrier height from an ideal value of 2.24 eV (considering Mo workfunction of 4.53 eV) indicates Fermi level pinning at the interface. We attributed such non-ideal behavior to the existence of thin interfacial layer and interface states between metal and diamond which forms Metal-Interfacial layer-Semiconductor (MIS) structure. Oxygen surface treatment during fabrication process might have induced them. From forward bias C–V characteristics, the minimum thickness of the interfacial layer is approximately 0.248 nm. Energy distribution profile of the interface state density is then evaluated from the forward bias I–V characteristics based on the MIS model. The interface state density is found to be uniformly distributed with values around 10 13  eV − 1 ·cm − 2 .

  • Diamond Vertical Schottky Barrier Diode with Al2O3 Field Plate
    Materials Science Forum, 2012
    Co-Authors: Hitoshi Umezawa, Masanori Nagase, Yukako Kato, Shinichi Shikata
    Abstract:

    A field-plate structure is applied to vertical diamond Schottky Barrier Diode. A sputtered Al2O3 with 0.2 µm thickness is utilized for field-plate insulator. Fabricated diamond VSBD shows low leakage characteristics. Accordingly, the breakdown voltage is improved from 900V to 1,800V.

  • Switching characteristics of a diamond Schottky Barrier Diode
    IEICE Electronics Express, 2010
    Co-Authors: Kazuya Kodama, Hitoshi Umezawa, Tsuyoshi Funaki, Shinichi Shikata
    Abstract:

    The static current-voltage (I-V) characteristics of a diamond Schottky Barrier Diode (SBD) have been previously studied. This paper experimentally studies the switching characteristics of a diamond SBD in comparison with the characteristics of a silicon carbide (SiC) SBD. The forward conduction current and the reverse bias voltage dependency of the reverse recovery phenomenon during the fast-switching operation of an SBD are evaluated. The experimental results validate the majority carrier device characteristics of the diamond SBD under study. The results indicate the feasibility of using a diamond device in a power conversion circuit.

  • Fabrication of a field plate structure for diamond Schottky Barrier Diodes
    Diamond and Related Materials, 2009
    Co-Authors: Kazuhiro Ikeda, Hitoshi Umezawa, Natsuo Tatsumi, Kumaresan Ramanujam, Shinichi Shikata
    Abstract:

    Abstract We investigated a field plate structure using Al 2 O 3 . A field plate structure for a diamond Schottky Barrier Diode was fabricated and the electric breakdown properties were tested for electric field concentration and passivation. A Schottky Barrier Diode terminated using the field plate with a field oxide of Al 2 O 3 showed about three times higher reverse blocking voltage than an unterminated one.

  • thermally stable Schottky Barrier Diode by ru diamond
    Applied Physics Express, 2009
    Co-Authors: Kazuhiro Ikeda, Hitoshi Umezawa, Kumaresan Ramanujam, Shinichi Shikata
    Abstract:

    For the high temperature operation of diamond for high power devices, a new Ru/diamond material contact was proposed for the first time for thermally stable Schottky Barrier Diode (SBD). This contact showed very good Schottky properties, with the further advantages of low resistivity, high chemical stability and very high adhesion characteristics. The devices were tested for thermal stability at 400 °C for 1500 h and 500 °C for 250 h. The SBD characteristics were highly stable, and after an initial stabilization time of 250 h, further changes in the parameters were less than 2.5% from 250 to 1500 h at 400 °C. For 500 °C testing, there was no change from 100 to 250 h. This thermally stable Schottky contact is promising for future high temperature operation device, such as those applied in the cooling systems-free power modules.

Kui Dang - One of the best experts on this subject based on the ideXlab platform.

  • beveled fluoride plasma treatment for vertical beta ga 2 o 3 Schottky Barrier Diode with high reverse blocking voltage and low turn on voltage
    IEEE Electron Device Letters, 2020
    Co-Authors: Hong Zhou, Qian Feng, Yue Hao, Jincheng Zhang, Kui Dang, Xuanwu Kang, Zhaoqing Feng, Chunyong Zhao, Xusheng Tian, Yachao Zhang
    Abstract:

    In this letter, we report on demonstrating a high performance vertical $\beta $ -Ga2O3 Schottky Barrier Diode (SBD) based on a self-aligned beveled fluorine plasma treatment (BFPT) edge termination structure. Owing to the strong electronegativity of fluorine ions, the fixed negative charges introduced by F ions during self-aligned BFPT process alleviate the electric field crowding, reduce the reverse leakage current and improve the breakdown voltage up to 1 050V even with a low differential on resistance of 2.5 $\text{m}\Omega \cdot $ cm2, combining with a high $I_{\text {on}}/I_{\text {off}}$ of 109, a Schottky Barrier height of 1.03 eV and a low ideality factor of 1.07-1.11.Without implantation and post annealing, the self-aligned BFPT can serve as a simple, effective and viable edge termination technique to fabricate high performance $\beta $ -Ga2O3 rectifiers.

  • high performance vertical beta ga 2 o 3 Schottky Barrier Diode with implanted edge termination
    IEEE Electron Device Letters, 2019
    Co-Authors: Hong Zhou, Qian Feng, Jing Ning, Chunfu Zhang, Yue Hao, Qinglong Yan, Jincheng Zhang, Zhihong Liu, Yanni Zhang, Kui Dang
    Abstract:

    This work reports on implementing Mg implanted Edge Termination (ET), a simple but very useful technique to increase the breakdown voltage (BV) of the vertical $\beta $ -Ga2O3 Schottky Barrier Diode (SBD). With this ET, vertical $\beta $ -Ga2O3 SBD demonstrates a reverse blocking voltage of 1.55 kV and low specific on-resistance ( ${R} _{ \mathrm{\scriptscriptstyle ON},\textrm {sp}}$ ) of 5.1 $\text{m}\Omega \cdot \textrm {cm}^{\textrm {2}}$ at a lightly doped $\beta $ -Ga2O3 layer with epitaxial thickness of $10~\mu \text{m}$ , yielding a high power figure-of-merit (P-FOM) of 0.47 GW/cm2. Combined with high forward current on/off ratio of 108 ~ 109, Schottky Barrier height of 1.01 eV, and ideality factor of 1.05, vertical $\beta $ -Ga2O3 Schottky Diode with implanted ET verifies its great potential for future power rectifiers.

  • field plated lateral beta ga 2 o 3 Schottky Barrier Diode with high reverse blocking voltage of more than 3 kv and high dc power figure of merit of 500 mw cm 2
    IEEE Electron Device Letters, 2018
    Co-Authors: Hong Zhou, Qian Feng, Chunfu Zhang, Jincheng Zhang, Kui Dang, Xuanwu Kang, Yuncong Cai, Zhaoqing Feng, Yangyang Gao, Yue Hao
    Abstract:

    In this letter, we report on demonstrating high-performance field-plated lateral $\beta $ -Ga2O3 Schottky Barrier Diode (SBD) on a sapphire substrate with a reverse blocking voltage of more than 3 kV and a low dc specific ON-resistance ( ${R}_{{ \mathrm{\scriptscriptstyle ON}, \text {sp}}}$ ) of 24.3 $\text{m}\Omega \cdot $ cm2 at an anode–cathode spacing ( ${L}_{\text {AC}}$ ) of $24~\mu \text{m}$ . To the best of our knowledge, this lateral breakdown voltage (BV) >3 kV with dc power figure-of-merit (FOM) >370 MW/cm2 is the highest BV achieved among all the $\beta $ -Ga2O3 SBDs. Meanwhile, lateral $\beta $ -Ga2O3 SBD with ${L}_{\text {AC}} = \text {16}\,\,\mu \text{m}$ also demonstrates a high BV of 2.25 kV and low ${R}_{{ \mathrm{\scriptscriptstyle ON}, \text {sp}}} = \text {10.2}\,\,\text{m}\Omega \cdot $ cm2, yielding a record high dc power FOM of 500 MW/cm2. Combining with 109 high-current ON/OFF ratio, 1.15-eV Schottky Barrier height and 1.25 ideality factor, $\beta $ -Ga2O3 SBD with field-plate structure shows its great promise for power electronics applications.

  • lateral beta ga 2 o 3 Schottky Barrier Diode on sapphire substrate with reverse blocking voltage of 1 7 kv
    IEEE Journal of the Electron Devices Society, 2018
    Co-Authors: Hong Zhou, Qian Feng, Jincheng Zhang, Kui Dang, Yuncong Cai, Zhaoqing Feng, Yangyang Gao, Yue Hao
    Abstract:

    In this paper, we report on achieving the first high performance lateral $\beta $ -Ga2O3 Schottky Barrier Diode (SBD) on sapphire substrate via transferring $\beta $ -Ga2O3 nano-membrane channel from a low dislocation density bulk $\beta $ -Ga2O3 substrate. Non field-plated lateral SBDs with Schottky–Ohmic contact distance of 4, 6, 11, and $15 \mu$ m demonstrate a reverse breakdown voltage (BV) of 0.64, 0.85, 1.2, and 1.7 kV with on resistance ( $R_\text {on}$ ) of 47, 66, 91, and 190 $\omega \cdot $ mm, respectively. This lateral $R_{\text {on}, \text{sp}}$ ~ BV performance is comparable to that of vertical SBDs. Combining with 107 ~ 108 high temperature current on/off ratio, $\beta $ -Ga2O3 SBD shows its great promise for power rectifying once the $\beta $ -Ga2O3 drift layer epitaxial growth becomes more mature.

Jincheng Zhang - One of the best experts on this subject based on the ideXlab platform.

  • demonstration of a 2 kv al 0 85 ga 0 15 n Schottky Barrier Diode with improved on current and ideality factor
    IEEE Electron Device Letters, 2020
    Co-Authors: Yanni Zhang, Hong Zhou, Jing Ning, Chunfu Zhang, Jincheng Zhang, Shengrui Xu, Kai Cheng, Lei Zhang
    Abstract:

    In this letter, we report on demonstrating a Schottky Barrier Diode (SBD) with high reverse blocking voltage by incorporating an ultra-wide bandgap semiconductor Al0.85 Ga0.15 N channel. Benefited from the lower activation energy of the Si in GaN, the net carrier concentration of Al0.85 Ga0.15N can be essentially enhanced to ${2}\times {10}^{{17}}$ cm−3 level with surface roughness of 0.33 nm. Due to the good material property, a reverse blocking voltage of 2 kV and room temperature ideality factor of 2.3 are demonstrated. Combined with the significantly improved on-current and on/off ratio of more than 106 when compared with other AlN SBDs, Al0.85 Ga0.15 N turns out to be a competitive AlN counterpart by considering the compromise among ultra-wide bandgap, dopant activation, and material property.

  • beveled fluoride plasma treatment for vertical beta ga 2 o 3 Schottky Barrier Diode with high reverse blocking voltage and low turn on voltage
    IEEE Electron Device Letters, 2020
    Co-Authors: Hong Zhou, Qian Feng, Yue Hao, Jincheng Zhang, Kui Dang, Xuanwu Kang, Zhaoqing Feng, Chunyong Zhao, Xusheng Tian, Yachao Zhang
    Abstract:

    In this letter, we report on demonstrating a high performance vertical $\beta $ -Ga2O3 Schottky Barrier Diode (SBD) based on a self-aligned beveled fluorine plasma treatment (BFPT) edge termination structure. Owing to the strong electronegativity of fluorine ions, the fixed negative charges introduced by F ions during self-aligned BFPT process alleviate the electric field crowding, reduce the reverse leakage current and improve the breakdown voltage up to 1 050V even with a low differential on resistance of 2.5 $\text{m}\Omega \cdot $ cm2, combining with a high $I_{\text {on}}/I_{\text {off}}$ of 109, a Schottky Barrier height of 1.03 eV and a low ideality factor of 1.07-1.11.Without implantation and post annealing, the self-aligned BFPT can serve as a simple, effective and viable edge termination technique to fabricate high performance $\beta $ -Ga2O3 rectifiers.

  • high performance vertical beta ga 2 o 3 Schottky Barrier Diode with implanted edge termination
    IEEE Electron Device Letters, 2019
    Co-Authors: Hong Zhou, Qian Feng, Jing Ning, Chunfu Zhang, Yue Hao, Qinglong Yan, Jincheng Zhang, Zhihong Liu, Yanni Zhang, Kui Dang
    Abstract:

    This work reports on implementing Mg implanted Edge Termination (ET), a simple but very useful technique to increase the breakdown voltage (BV) of the vertical $\beta $ -Ga2O3 Schottky Barrier Diode (SBD). With this ET, vertical $\beta $ -Ga2O3 SBD demonstrates a reverse blocking voltage of 1.55 kV and low specific on-resistance ( ${R} _{ \mathrm{\scriptscriptstyle ON},\textrm {sp}}$ ) of 5.1 $\text{m}\Omega \cdot \textrm {cm}^{\textrm {2}}$ at a lightly doped $\beta $ -Ga2O3 layer with epitaxial thickness of $10~\mu \text{m}$ , yielding a high power figure-of-merit (P-FOM) of 0.47 GW/cm2. Combined with high forward current on/off ratio of 108 ~ 109, Schottky Barrier height of 1.01 eV, and ideality factor of 1.05, vertical $\beta $ -Ga2O3 Schottky Diode with implanted ET verifies its great potential for future power rectifiers.

  • field plated lateral beta ga 2 o 3 Schottky Barrier Diode with high reverse blocking voltage of more than 3 kv and high dc power figure of merit of 500 mw cm 2
    IEEE Electron Device Letters, 2018
    Co-Authors: Hong Zhou, Qian Feng, Chunfu Zhang, Jincheng Zhang, Kui Dang, Xuanwu Kang, Yuncong Cai, Zhaoqing Feng, Yangyang Gao, Yue Hao
    Abstract:

    In this letter, we report on demonstrating high-performance field-plated lateral $\beta $ -Ga2O3 Schottky Barrier Diode (SBD) on a sapphire substrate with a reverse blocking voltage of more than 3 kV and a low dc specific ON-resistance ( ${R}_{{ \mathrm{\scriptscriptstyle ON}, \text {sp}}}$ ) of 24.3 $\text{m}\Omega \cdot $ cm2 at an anode–cathode spacing ( ${L}_{\text {AC}}$ ) of $24~\mu \text{m}$ . To the best of our knowledge, this lateral breakdown voltage (BV) >3 kV with dc power figure-of-merit (FOM) >370 MW/cm2 is the highest BV achieved among all the $\beta $ -Ga2O3 SBDs. Meanwhile, lateral $\beta $ -Ga2O3 SBD with ${L}_{\text {AC}} = \text {16}\,\,\mu \text{m}$ also demonstrates a high BV of 2.25 kV and low ${R}_{{ \mathrm{\scriptscriptstyle ON}, \text {sp}}} = \text {10.2}\,\,\text{m}\Omega \cdot $ cm2, yielding a record high dc power FOM of 500 MW/cm2. Combining with 109 high-current ON/OFF ratio, 1.15-eV Schottky Barrier height and 1.25 ideality factor, $\beta $ -Ga2O3 SBD with field-plate structure shows its great promise for power electronics applications.

  • lateral beta ga 2 o 3 Schottky Barrier Diode on sapphire substrate with reverse blocking voltage of 1 7 kv
    IEEE Journal of the Electron Devices Society, 2018
    Co-Authors: Hong Zhou, Qian Feng, Jincheng Zhang, Kui Dang, Yuncong Cai, Zhaoqing Feng, Yangyang Gao, Yue Hao
    Abstract:

    In this paper, we report on achieving the first high performance lateral $\beta $ -Ga2O3 Schottky Barrier Diode (SBD) on sapphire substrate via transferring $\beta $ -Ga2O3 nano-membrane channel from a low dislocation density bulk $\beta $ -Ga2O3 substrate. Non field-plated lateral SBDs with Schottky–Ohmic contact distance of 4, 6, 11, and $15 \mu$ m demonstrate a reverse breakdown voltage (BV) of 0.64, 0.85, 1.2, and 1.7 kV with on resistance ( $R_\text {on}$ ) of 47, 66, 91, and 190 $\omega \cdot $ mm, respectively. This lateral $R_{\text {on}, \text{sp}}$ ~ BV performance is comparable to that of vertical SBDs. Combining with 107 ~ 108 high temperature current on/off ratio, $\beta $ -Ga2O3 SBD shows its great promise for power rectifying once the $\beta $ -Ga2O3 drift layer epitaxial growth becomes more mature.