The Experts below are selected from a list of 270 Experts worldwide ranked by ideXlab platform
Zexiang Shen - One of the best experts on this subject based on the ideXlab platform.
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Identification of refractory-metal-free C40 TiSi2 for low temperature C54 TiSi2 formation
Applied Physics Letters, 2001Co-Authors: S. Y. Chen, Zexiang ShenAbstract:A refractory-metal-free C40 TiSi2 phase formed by pulsed-laser annealing is identified experimentally by combined convergent beam electron diffraction (CBED) study and CBED pattern simulation. The simulation shows that the C40 TiSi2 has a hexagonal structure with the space group P6222 (180) and lattice parameters a=0.471 nm and c=0.653 nm. Upon further furnace annealing or rapid thermal annealing, C54 TiSi2 can be directly achieved from C40 TiSi2 at low temperatures (600–700 °C). This observation suggests that pulsed-laser annealing is promising for extension of TiSi2 into the subquarter micron region in Semiconductor Device Fabrication.
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High-Temperature Properties of a Low Dielectric Constant Organic Spin-on Glass for Multilevel Interconnects
Applied Spectroscopy, 2001Co-Authors: C. Y. Wang, Zexiang Shen, Jia Zhen ZhengAbstract:In this paper, we report on the thermal properties of a low-dielectric-constant organic spin-on glass, methyl silsesquioxane (MSQ), an important material for Semiconductor Device Fabrication. The compositional and structural changes of this MSQ material, when heated in air and N 2, were investigated in detail with Fourier transform infrared (FT-IR) spectroscopy and thermogravimetric analysis (TGA). MSQ transforms to thermal oxide SiO 2 above 500 °C when heated in air, and it forms oxygen-deficient SiO 2 above 700 °C in N 2. Our results suggest that a cure temperature higher than the current 425 °C is preferred to form films with better cross-linked network structure.
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Thermal Cure Study of a Low-k Methyl Silsesquioxane for Intermetal Dielectric Application by FT-IR Spectroscopy
Applied Spectroscopy, 2000Co-Authors: C. Y. Wang, Zexiang Shen, Jia Zhen ZhengAbstract:In this paper, Fourier transform infrared (FT-IR) spectroscopy is used to study the thermal properties of methyl silsesquioxane (MSQ), an important low-dielectric-constant organic spin-on glass for Semiconductor Device Fabrication. The compositional and structural changes of MSQ with temperature are investigated in detail. The cross-linking process, where the three-dimensional networked structure is formed, is found to start at room temperature, and is almost complete at the typical baking temperature of 250 °C. Further cross-linking occurs during the curing process at 425 °C, and small short-chain clusters can also be driven away at this temperature by sublimation. In this study, we have assigned all the MSQ IR peaks and we have used the long-chain O–Si–O IR peak to calculate the “degree of cross-linking” quantitatively.
Wei-kan Chu - One of the best experts on this subject based on the ideXlab platform.
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High thermal stability of vacancy clusters formed in MeV Si-self-ion-implanted Si
Applied Physics Letters, 2008Co-Authors: Lin Shao, Phillip E. Thompson, Quark Y. Chen, Ki Bui, Jiarui Liu, Wei-kan ChuAbstract:We have shown that considerable vacancy defects, introduced by MeV Si self-ion implantation, can survive a 900°C∕5min annealing for gate formation. By analyzing the trap-limited Si interstitial diffusion, we have characterized these vacancy clusters. Furthermore, we show that the remaining vacancies are sufficient to reduce B diffusion. The study suggests that MeV ion implantation, a promising approach for ultrashallow junction formation in metal-oxide-Semiconductor Device Fabrication, can be inserted before gate formation (involving high temperature annealing) to avoid irradiation damage on gate structures.
Angus I. Kingon - One of the best experts on this subject based on the ideXlab platform.
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High temperature stability of lanthanum silicate dielectric on Si (001)
Applied Physics Letters, 2007Co-Authors: Jesse S. Jur, Daniel J. Lichtenwalner, Angus I. KingonAbstract:Integration of a high-κ dielectric into complementary metal-oxide-Semiconductor Devices requires thermal stability of the amorphous dielectric phase and chemical compatibility with silicon. The stability of amorphous lanthanum silicate on Si (001) is investigated by means of metal-insulator-Semiconductor capacitor measurements, back side secondary ion mass spectrometry (SIMS) depth profiling, and high-resolution transmission electron microscopy (HRTEM) after a 1000°C, 10s anneal in nitrogen ambient. Back side SIMS depth profiling of the TaN∕LaSiOx∕Si gate stack reveals no detectable lanthanum in the silicon substrate, and HRTEM shows stability of the amorphous LaSiOx. An effective work function near 4.0eV is obtained for these gate stacks, making the stack design ideal for n-type metal-oxide-Semiconductor Device Fabrication.
David Wei Zhang - One of the best experts on this subject based on the ideXlab platform.
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In Situ Analysis of Oxygen Vacancies and Band Alignment in HfO2/TiN Structure for CMOS Applications.
Nanoscale research letters, 2017Co-Authors: Xu-dong Chen, Lin Chen, Qing-qing Sun, Hao Zhu, Peng Zhou, Shi-jin Ding, David Wei ZhangAbstract:The density of oxygen vacancies characterization in high-k/metal gate is significant for Semiconductor Device Fabrication. In this work, a new approach was demonstrated to detect the density of oxygen vacancies by in situ x-ray photoelectron spectroscopy (XPS) and ultraviolet photoelectron spectroscopy (UPS) measurement. Moreover, the band alignment of the structure with optical band gap measured by spectroscopic ellipsometry (SE) and valence band offset by UPS were reported. The specific areal density of oxygen vacancies in high-k dielectric of HfO2/TiN was obtained by fitting the experiment data to be 8.202 × 1010cm− 2. This study would provide an effective approach to characterize the oxygen vacancies based defects which cause threshold voltage shifts and enormous gate leakage in modern MOSFET Devices.
Yangjun Zhang - One of the best experts on this subject based on the ideXlab platform.
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Polymer self assembly in Semiconductor microelectronics
Technical Digest - International Electron Devices Meeting IEDM, 2006Co-Authors: C.t. Black, E. M. Sikorski, I.v. Babich, R L Sandstrom, R. Ruiz, K W Guarini, Yangjun ZhangAbstract:We are inspired by the beauty and simplicity of self-organizing materials and the promise they hold for enabling continued improvements in Semiconductor technology. Self assembly is the spontaneous arrangement of individual elements into regular patterns; under suitable conditions, certain materials self organize into useful nanometer-scale patterns of importance to high-performance microelectronics applications. Polymer self assembly is a nontraditional approach to patterning integrated circuit elements at dimensions and densities inaccessible to traditional lithography methods. We review here our efforts in IBM to develop and integrate self-assembly processes as high-resolution patterning alternatives and to demonstrate targeted applications in Semiconductor Device Fabrication. We also provide a framework for understanding key requirements for the adoption of polymer self-assembly processes into Semiconductor technology, as well as a discussion of the ultimate dimensional scalability of the technique.
