The Experts below are selected from a list of 21252 Experts worldwide ranked by ideXlab platform
Zhijue Quan - One of the best experts on this subject based on the ideXlab platform.
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analysis of temperature dependence of dark current mechanisms for long wavelength hgcdte photovoltaic infrared detectors
Journal of Applied Physics, 2009Co-Authors: Xueli Chen, F Yin, Zhijue QuanAbstract:Resistance-voltage curves of n-on-p Hg1−хCdxTe long-wavelength infrared photodiodes forming 128-element array are measured in the temperature range of 40–150 K. Experimentally obtained characteristics are fitted by the simultaneous-mode nonlinear fitting program. The dark current mechanisms induced by diffusion, generation recombination, trap-assisted tunneling, band-to-band tunneling, and Series Resistance Effect are included in the physical model for R-V curve fitting. Six characteristic parameters as function of temperature are extracted from measured R-V curves. The characteristics of extracted current components at low temperatures indicate significant contributions from tunneling Effects, which is the dominant leakage current mechanism for reverse bias greater than approximately 50 mV. The Hg-vacancy-induced acceptor trap tends to invert to donor type at higher temperature, typically larger than 120 K, while it can maintain stable at the temperature of 60–40 K. The stable temperature of ion-implanta...
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Parameter determination from Resistance-voltage curve for long-wavelength HgCdTe photodiode
Journal of Applied Physics, 2006Co-Authors: Zhijue QuanAbstract:A data-processing approach has been developed to obtain device parameters from Resistance-voltage (R-V) curves measured on long-wavelength HgCdTe n-on-p photodiodes. The physical model used for R-V curve fitting includes the dark current mechanisms induced by diffusion, generation recombination, trap-assisted tunneling, and band-to-band tunneling. Moreover, the Series Resistance Effect is also taken into account. Six parameters, which include the dopant density Nd in the n region, the ratio of mobility to lifetime of electrons μn∕τn in the p region, the Effective lifetime τ0 in the depletion region, the relative energy position of trap level Et∕Eg and its density Nt in the depletion region, and the Series Resistance Rs, can be extracted from measured R-V curves. The fitting procedure has been presented in detail and the error ranges of the extracted parameters have been discussed. By fitting to the R-V characteristics of three long-wavelength devices with different Cd compositions, the applicability of ou...
ş Altindal - One of the best experts on this subject based on the ideXlab platform.
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the Effect of frequency and temperature on capacitance conductance voltage c g v characteristics of au n gaas schottky barrier diodes sbds
Materials Science in Semiconductor Processing, 2014Co-Authors: S Demirezen, E Ozavci, ş AltindalAbstract:Abstract The capacitance–voltage ( C – V ) and conductance–voltage ( G / ω – V ) characteristics of the Au/n-GaAs Schottky barrier diodes (SBDs) have been investigated for 10, 100 and 500 kHz at 80 and 280 K. To evaluate the reason of non-ideal behavior in C – V and G / ω – V plots, the measured C and G / ω values were corrected by taking into accounts Series Resistance Effect. Experimental results show that the values of C and G / ω were found to be a strong function of interface states ( N ss ) at inverse and depletion regions especially at low frequencies, but R s is Effective only at the accumulation region especially at high frequencies. Such behavior of the C and G / ω values may be attributed to an increase in polarization especially at low frequencies and the existence of N ss or dislocations between metal and semiconductor. It can be concluded that the increase in C and G / ω at low frequencies especially at weak and depletion regions results from the existence of N ss . The values of doping concentration ( N d ) and barrier height (BH) between metal and semiconductor were also obtained from the linear part of high frequency (500 kHz) C −2 vs. V plots at 80 and 280 K, respectively.
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the Effect of gamma irradiation on electrical and dielectric properties of organic based schottky barrier diodes sbds at room temperature
Radiation Physics and Chemistry, 2012Co-Authors: Habibe Uslu, ş Altindal, Mert Yildirim, Perihan DurmusAbstract:Abstract The Effect of 60Co (γ-ray) irradiation on the electrical and dielectric properties of Au/Polyvinyl Alcohol (Ni,Zn-doped)/n-Si Schottky barrier diodes (SBDs) has been investigated by using capacitance-voltage (C-V) and conductance-voltage (G/ω-V) measurements at room temperature and 1 MHz. The real capacitance and conductance values were obtained by eliminating Series Resistance (Rs) Effect in the measured capacitance (Cm) and conductance (Gm) values through correction. The experimental values of the dielectric constant (e′), dielectric loss (e″), loss tangent (tanδ), ac electrical conductivity (σac) and the real (M′) and imaginary (M″) parts of the electrical modulus were found to be strong functions of radiation and applied bias voltage, especially in the depletion and accumulation regions. In addition, the density distribution of interface states (Nss) profile was obtained using the high-low frequency capacitance (CHF–CLF) method for before and after irradiation. The Nss-V plots give two distinct peaks for both cases, namely before radiation and after radiation, and those peaks correspond to two different localized interface states regions at M/S interface. The changes in the dielectric properties in the depletion and accumulation regions stem especially from the restructuring and reordering of the charges at interface states and surface polarization whereas those in the accumulation region are caused by Series Resistance Effect.
F Aguirre - One of the best experts on this subject based on the ideXlab platform.
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experimental study of the Series Resistance Effect and its impact on the compact modeling of the conduction characteristics of hfo2 based resistive switching memories
Journal of Applied Physics, 2021Co-Authors: D Maldonado, F Aguirre, G Gonzalezcordero, A Roldan, M B Gonzalez, F Jimenezmolinos, F Campabadal, E MirandaAbstract:The relevance of the intrinsic Series Resistance Effect in the context of resistive random access memory (RRAM) compact modeling is investigated. This Resistance notably affects the conduction characteristic of resistive switching memories so that it becomes an essential factor to consider when fitting experimental data, especially those coming from devices exhibiting the so-called snapback and snapforward Effects. A thorough description of the Resistance value extraction procedure and an analysis of the connection of this value with the set and reset transition voltages in HfO2-based valence change memories are presented. Furthermore, in order to illustrate the importance of this feature in the shape of the I–V curve, the Stanford model for RRAM devices is enhanced by incorporating the Series Resistance as an additional parameter in the Verilog-A model script.
E Miranda - One of the best experts on this subject based on the ideXlab platform.
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experimental study of the Series Resistance Effect and its impact on the compact modeling of the conduction characteristics of hfo2 based resistive switching memories
Journal of Applied Physics, 2021Co-Authors: D Maldonado, F Aguirre, G Gonzalezcordero, A Roldan, M B Gonzalez, F Jimenezmolinos, F Campabadal, E MirandaAbstract:The relevance of the intrinsic Series Resistance Effect in the context of resistive random access memory (RRAM) compact modeling is investigated. This Resistance notably affects the conduction characteristic of resistive switching memories so that it becomes an essential factor to consider when fitting experimental data, especially those coming from devices exhibiting the so-called snapback and snapforward Effects. A thorough description of the Resistance value extraction procedure and an analysis of the connection of this value with the set and reset transition voltages in HfO2-based valence change memories are presented. Furthermore, in order to illustrate the importance of this feature in the shape of the I–V curve, the Stanford model for RRAM devices is enhanced by incorporating the Series Resistance as an additional parameter in the Verilog-A model script.
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analytic expression for the fowler nordheim v i characteristic including the Series Resistance Effect
Solid-state Electronics, 2011Co-Authors: E Miranda, Felix PalumboAbstract:Abstract It is shown in this communication that the Fowler–Nordheim (FN) tunneling expression for the current–voltage ( I – V ) characteristic can be analytically inverted so that an exact expression for the voltage–current ( V – I ) characteristic can be obtained. The solution of the resulting implicit equation is found using the Lambert W function, i.e. the solution of the transcendental equation we w = x . The reported expressions are supported by experimental I – V curves measured in thin (≈5 nm) SiO 2 films in MOS capacitors. The analysis includes the case of a tunneling oxide with a large Series Resistance. For practical purposes, a closed-form expression for W based on a Pade-type approximation is also provided.
D V Kerns - One of the best experts on this subject based on the ideXlab platform.
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temperature dependence and Effect of Series Resistance on the electrical characteristics of a polycrystalline diamond metal insulator semiconductor diode
Journal of Applied Physics, 1995Co-Authors: W P Kang, J L Davidson, Yasar Gurbuz, D V KernsAbstract:Temperature dependency and the Series Resistance Effect on the electrical characteristics of a polycrystalline diamond‐based (Au/Ti)/undoped‐diamond/doped‐diamond metal‐insulator‐ semiconductor Schottky diode were investigated in a temperature range 25–300 °C. The current‐voltage (I‐V) characteristics of the device show rectifying behavior with the forward bias conduction limited by Series Resistance. Over the temperature range investigated, the I‐V data confirmed that the conduction mechanism of the diode is controlled by thermionic field emission. Modifying the thermionic field emission equation to include the Series Resistance model allows the ideality factor and barrier height of the Schottky diode to be calculated. Temperature dependence of the ideality factor and apparent barrier height was determined. By extrapolating the forward saturation current data, the evaluated ideality factor was observed to decrease from 2.4 to 1.1 while the apparent barrier increased linearly from 0.68 to 1.02 eV in the temperature range from 25 to 300 °C. The Richardson plot, ln(I0/T2) vs 103/T, has linear characteristics and indicates a true barrier height of 0.31 eV. Analysis of the temperature‐dependent Series resistor measurements indicates a boron doping activation energy of 0.104 eV in the p diamond. The capacitance‐voltage‐frequency measurement confirmed that the measured capacitance varies with applied bias and frequency due to the presence of the Schottky barrier, impurity level, and high Series Resistance. Capacitance‐frequency measurement at zero bias indicated that the degrading capacitance at high frequency is primarily due to the high Series Resistance of the bulk polycrystalline diamond.
