Sputter Deposition

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Jyh-ming Ting - One of the best experts on this subject based on the ideXlab platform.

  • Sputter Deposition of ZnO nanorods/thin-film structures on Si
    Thin Solid Films, 2006
    Co-Authors: Ming-ta Chen, Jyh-ming Ting
    Abstract:

    Using a recently developed Sputter Deposition technique, ZnO deposits were grown at the room temperature on silicon wafers with various kinds of copper surface layers. The copper layers were prepared using Sputter Deposition, thermal evaporation, or electroless plating technique. It was found that the surface copper prepared using both Sputter Deposition and thermal evaporation technique grew only ZnO thin films, while the surface copper prepared using Sputter Deposition technique grew ZnO nanorods/thin-film deposits. The relation between the copper characteristics and the growth of ZnO nanorods/thin-film deposits was investigated. The growth kinetics of the ZnO nanorods/thin film structure is also discussed.

  • growth of single crystal zno nanowires using Sputter Deposition
    Diamond and Related Materials, 2003
    Co-Authors: Wen Ting Chiou, Wanyu Wu, Jyh-ming Ting
    Abstract:

    Abstract Single crystal zinc oxide is a very promising material for light-emitting devices in blue, violet, and ultraviolet regions due to its wide direct band gap of 3.37 eV. Single crystal ZnO has been in a form of thin film or tetrapod-like whisker. Recently, the growth of highly oriented ZnO whiskers was also reported. Irrespective of the form and growth technique, successful growth of single crystal films or whiskers inevitably requires the use of a single-crystal substrate such as sapphire and diamond. In this paper, we report the growth of single crystal ZnO nanowires on a non-single-crystal substrate using a conventional Sputter Deposition technique. An r.f. magnetron Sputter Deposition system was used for the growth of ZnO nanowires in O2/Ar mixtures. The substrate used was silicon wafers with copper metallization. After the ZnO Deposition, specimens were analyzed using scanning electron microscopy (SEM), transmission electron microscopy (TEM), X-ray diffractometry (XRD), and selected area diffraction (SAD).

  • DLC composite thin films by Sputter Deposition
    Diamond and Related Materials, 2002
    Co-Authors: Jyh-ming Ting, Howard Lee
    Abstract:

    This paper reports a new composite thin film of Pt-DLC for used as a microelectrode for electrochemical analysis. An RF Sputter Deposition technique was used for the preparation of these thin films under various ratios of Ar/CH4. The microstructure of as-deposited thin films was characterized using transmission electron microscopy and Raman spectroscopy, the composition using electron probe microanalysis, the surface morphology using scanning electron microscopy, and the sheet resistance using a four-point probe. Correlation among the growth parameters, film composition, and structure are presented. Both the composition and Raman characteristics were found to be strong functions of the Deposition rate. Improved electrical conductivity and reduced film stress were also found due to the addition of platinum into DLC. © 2002 Elsevier Science B.V. All rights reserved.

Tsukasa Torimoto - One of the best experts on this subject based on the ideXlab platform.

Susumu Kuwabata - One of the best experts on this subject based on the ideXlab platform.

Michael Powalla - One of the best experts on this subject based on the ideXlab platform.

  • influence of cathode Sputter Deposition on organic solar cells
    Applied Physics Letters, 2007
    Co-Authors: Erik Ahlswede, Jonas Hanisch, Michael Powalla
    Abstract:

    The Sputter Deposition technique is usually avoided for organic solar cells, despite its technological advantages, because it may potentially damage the organic absorber layer. The consequences of Sputtering on device performance-presumably related to changes in the absorber morphology and defect distribution near the interface-are discussed. Despite its negative influence on as-deposited samples, Sputtering in combination with thermal annealing can actually be beneficial for pure aluminum contacts, leading to efficiencies even better than those of cells with thermally evaporated cathodes, mainly due to an enhanced open-circuit voltage.

C. R. Aita - One of the best experts on this subject based on the ideXlab platform.

  • In situ Sputter Deposition discharge diagnostics for tailoring ceramic film growth
    Journal of Vacuum Science and Technology, 1998
    Co-Authors: C. R. Aita
    Abstract:

    Reactive Sputter Deposition is widely used for growing technologically important ceramic films, including high melting point phases near room temperature, metastable phases, and nanoscale layered structures with controlled interfaces. Film properties are governed by kinetic processes at each electrode and in the gas phase. A knowledge of the reacting species and reaction paths is essential for reproducible growth of desired ceramic phases and structures. Obtaining this knowledge is the first critical step in developing transferrable processes. In this article, we briefly describe reactive Sputter Deposition of oxides and nitrides from metal and ceramic targets, and identify important chemical features of the process. Production of activated gas species by plasma volume collisions between ground state reactive gas molecules and rare gas atoms in low-lying metastable energy states is discussed. We then review mass and optical spectrometric methods for real-time monitoring of nonelectronic species in the dis...

  • Tailored Ceramic Film Growth at Low Temperature by Reactive Sputter Deposition
    Critical Reviews in Solid State and Materials Sciences, 1998
    Co-Authors: C. R. Aita
    Abstract:

    Reactive Sputter Deposition of ceramic films with tailored structure is addressed in this article. We begin with a brief overview of reactive Sputter Deposition specifically related to oxide and nitride films, including techniques for in situ plasma diagnostics. We identify two flux components in the plasma that have a controlling influence on film structure and stoichiometry: (1) the flux bearing Sputtered target species, which consists of atoms (M) or reacted molecules (MOx or MNx), and (2) the reactive gas flux-containing species in various states of activation. Nonelectronic plasma reactions in which one partner is an excited rare gas species are described, and their role in modifying the Sputtered flux, as well as in creating activated reactive gas species, is discussed. We then illustrate the general concepts presented in the overview using four examples of technologically interesting materials grown by rf diode Sputter Deposition at temperature below 300°C, including: (1) fifth period metal (Zr, Y,...