Ultraviolet Lasers

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The Experts below are selected from a list of 231 Experts worldwide ranked by ideXlab platform

Carmen S. Menoni - One of the best experts on this subject based on the ideXlab platform.

P. W. Wachulak - One of the best experts on this subject based on the ideXlab platform.

M C Marconi - One of the best experts on this subject based on the ideXlab platform.

S. Zhao - One of the best experts on this subject based on the ideXlab platform.

  • algan nanowires path to electrically injected semiconductor deep Ultraviolet Lasers
    IEEE Journal of Quantum Electronics, 2018
    Co-Authors: S. Zhao
    Abstract:

    In this paper, we review the recent progress of AlGaN nanowire heterostructures and the demonstration of electrically pumped semiconductor deep Ultraviolet (UV) Lasers with such nanowires. Future prospects and challenges for nanowire deep UV Lasers are also presented.

  • electrically injected algan nanowire deep Ultraviolet Lasers
    IEEE Photonics Conference, 2016
    Co-Authors: S. Zhao, Xianhe Liu, S Y Woo, Matthieu Bugnet, G. Botton
    Abstract:

    We report on the demonstration of AlGaN nanowire Lasers in the Ultraviolet (UV)-B and UV-C bands. The AlGaN nanowires were grown directly on Si substrate and were characterized by the presence of quantum-dot-like nanostructures. At room temperature, the lasing threshold was measured to be ∼30 μA.

  • three dimensional quantum confinement of charge carriers in self organized algan nanowires a viable route to electrically injected deep Ultraviolet Lasers
    Nano Letters, 2015
    Co-Authors: S. Zhao, Xianhe Liu, S Y Woo, Matthieu Bugnet, Jidong Kang, G. Botton
    Abstract:

    We report on the molecular beam epitaxial growth and structural characterization of self-organized AlGaN nanowire arrays on Si substrate with high luminescence efficiency emission in the deep Ultraviolet (UV) wavelength range. It is found that, with increasing Al concentration, atomic-scale compositional modulations can be realized, leading to three-dimensional quantum confinement of charge carriers. By further exploiting the Anderson localization of light, we have demonstrated, for the first time, electrically injected AlGaN Lasers in the deep UV band operating at room temperature. The laser operates at ∼289 nm and exhibits a threshold of 300 A/cm2, which is significantly smaller compared to the previously reported electrically injected AlGaN multiple quantum well Lasers.

  • AlGaN nanowire Ultraviolet Lasers on Si
    2015 IEEE Summer Topicals Meeting Series (SUM), 2015
    Co-Authors: S. Zhao, K.-h. Li, G. Botton, Z. Mi
    Abstract:

    In this work, we demonstrate electrically injected Ultraviolet Lasers by spontaneously formed AlGaN nanowires on Si. The optical cavity is formed due to the Anderson localization of light.

  • ultralow threshold electrically injected algan nanowire Ultraviolet Lasers on si
    Proceedings of SPIE, 2015
    Co-Authors: Xianhe Liu, S. Zhao, Qi Wang
    Abstract:

    Ultraviolet (UV) Lasers are of paramount importance for applications in water purification, diagnosis and bio-agent detection. Here we report that, with the use of dislocation-free AlGaN nanowires formed directly on Si substrate, electrically injected UV emission in the wavelength range from 319 nm to 335 nm can be readily achieved, which is the shortest wavelength range ever reported for electrically injected semiconductor Lasers. In this work, catalyst-free AlGaN nanowire arrays are grown directly on Si substrate by radio frequency plasma-assisted molecular beam epitaxy (MBE). Our detailed calculation shows that such vertically aligned randomly distributed sub-wavelength scale nanowire array can sustain random lasing action. Various lasing peaks from 319 nm to 335 nm can be measured from such AlGaN nanowire samples under electrical injection. The threshold is measured to be in the range of tens of A/cm2 at cryogenic temperature, which is significantly smaller than the commonly reported GaN-based quantum well Lasers. The measured linewidth is as narrow as 0.2 nm.

Jorge J. Rocca - One of the best experts on this subject based on the ideXlab platform.

  • Nanopatterning and Nanomachining with Table-top Extreme Ultraviolet Lasers
    MRS Proceedings, 2011
    Co-Authors: M C Marconi, P. W. Wachulak, Carmen S. Menoni, M. G. Capeluto, Georgyi Vaschenko, Herman Bravo, Jorge J. Rocca, Erik H. Anderson, Weilun Chao, David T. Attwood
    Abstract:

    Nanopatterning and nanomachining of PMMA coated wafers was performed using table top extreme Ultraviolet Lasers. Features below 100 nm were imprinted with short (50-60 s) exposure times.

  • Nanopatterning in a compact setup using table top extreme Ultraviolet Lasers
    Opto-Electronics Review, 2008
    Co-Authors: P. W. Wachulak, Carmen S. Menoni, M. G. Capeluto, Jorge J. Rocca, M. C. Marconi
    Abstract:

    The recent development of table top extreme Ultraviolet (EUV) Lasers have enabled new applications that so far were restricted to the use of large facilities. These compact sources bring now to the laboratory environment the capabilities that will allow a broader application of techniques related to nanotechnology and nanofabrication. In this paper we review the advances in the utilization of EUV Lasers in nanopatterning. In particular we show results of the nanopatterning using a table-top capillary discharge laser producing 0.12-mJ laser pulses with 1.2-ns time duration at a wavelength λ = 46.9 nm. The nanopatterning was realized by interferometric lithography using a Lloyd’s mirror interferometer. Two standard photoresists were used in this work, polymethyl methacrylate (PMMA) and hydrogen silsesquioxane (HSQ). Pillars with a full width half maximum (FWHM) diameter of 60 nm and holes with FWHM diameter of 130 nm were obtained over areas in excess of 500×500 μm^2.

  • Nanoscale Resolution Microscopy and Ablation with Extreme Ultraviolet Lasers
    LEOS 2007 - IEEE Lasers and Electro-Optics Society Annual Meeting Conference Proceedings, 2007
    Co-Authors: Carmen S. Menoni, M C Marconi, Georgyi Vaschenko, Herman Bravo, Fernando Brizuela, C. Brewer, B. Langdon, Dale Martz, B. M. Luther, Jorge J. Rocca
    Abstract:

    We obtain a spatial resolution down to 38 nm with full field imaging and laser-ablation systems that exploit the short wavelength and high brightness output from compact extreme Ultraviolet Lasers in combination with zone plate optics.

  • Nanometer-scale imaging and ablation with Extreme Ultraviolet Lasers
    2007 Conference on Lasers and Electro-Optics (CLEO), 2007
    Co-Authors: Carmen S. Menoni, M C Marconi, Georgyi Vaschenko, Herman Bravo, Fernando Brizuela, C. Brewer, B. Langdon, Mark Berrill, Dale Martz, Jorge J. Rocca
    Abstract:

    The short wavelength and high brightness of compact extreme Ultraviolet Lasers is shown to enable the development of microscopes with spatial resolution of tens of nanometers and new types of nanoprobes.

  • Table top nanopatterning with extreme Ultraviolet laser illumination
    Microelectronic Engineering, 2007
    Co-Authors: M. G. Capeluto, P. W. Wachulak, M C Marconi, Carmen S. Menoni, Jorge J. Rocca, Erik H. Anderson, Weilun Chao, Dinesh Patel, Claudio Iemmi, David Attwood
    Abstract:

    Patterning with extreme Ultraviolet light generated by a compact, bright laser source operating at a wavelength of 46.9nm is demonstrated using two complementary approaches: multiple beam interferometric lithography and de-magnifying projection. Features with sizes ranging from 370nm to 60nm were printed in a few seconds in poly-methyl methacrylate resist. These proof-of-principle experiments demonstrate practical table-top nanopatterning tools based on extreme Ultraviolet Lasers for nanotechnology applications.

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