The Experts below are selected from a list of 7668 Experts worldwide ranked by ideXlab platform
J L Tisso - One of the best experts on this subject based on the ideXlab platform.
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an information theoretic perspective on the challenges and advances in the race toward 12μm Pixel Pitch megaPixel uncooled infrared imaging
Proceedings of SPIE, 2012Co-Authors: Christelloic Tisse, J L Tisso, Arnaud CrastesAbstract:a-Si (amorphous Silicon) microbolometer FPAs (Focal Place Arrays) with TEC-less (without Thermo-Electric Cooler) and shutterless capabilities have become the technology of choice for low cost, high resolution and low SWaP (Size, Weight and Power) uncooled LWIR (Long Wave Infrared) cameras used in mobile applications. Over the past 10 years, a-Si microbolometric FPAs have seen a steady reduction in Pixel Pitch from 45μm to 17μm as well as an increase in Pixel count from 160x120 to 1024x768. Next-generation arrays are projected to feature 12μm Pixel Pitch and resolution up to 1440x1080. However, microbolometer technology scaling has detrimental effects on Pixel performance and the imaging system's optical complexity, which does not always yield a better infrared image quality. In this paper, we describe, from an information-theoretic perspective, the benefits of using computational imaging technologies and more specifically pupil function engineering to compensate for the optical resolution and noise sensitivity problems caused by shrinking Pixel geometry in microbolometer FPAs. Computational imaging is a developing field in which the image acquisition process is shared between the optics and post-capture digital processing (cf. encoding-decoding scheme).
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high performance uncooled amorphous silicon tec less xga irfpa with 17μm Pixel Pitch
Proceedings of SPIE, 2010Co-Authors: C Trouilleau, S Noble, F Gine, D Pochic, A Durand, P Robe, S Cortial, Michel Vilai, J L TissoAbstract:ABSTRACT The high level of accumulated expertise by ULIS and CE A/LETI on uncooled microbolom eters made from amorphous silicon with 45µm, 35µm and 25µm, enables ULIS to devel op VGA and XGA IRFP A formats with 17µm Pixel-Pitch to fulfill every applications. These detector keeps all the recent innovations developed on the 25µm Pixel-Pitch ROIC (detector configuration by serial link, low power consump tion and wide electrical dynami c range). The specific appeal of these units lies in the high spatial resolution it provides while keeping the small thermal time constant. The reduction of the Pixel-Pitch turns the TEC-less VGA array into a product well adapted for high resolution and compact systems and the XGA a product well adapted for high resolution imaging systems. High electro-optical performances have been demonstrated with NETD < 50mK. We insist on NETD and wide thermal dynamic range trade-off, and on the high characteristics uniformity, achieved thanks to the mastering of the amorphous silicon technology as well as the ROIC design. This technology node paves the way to high end products as well as low end compact smaller formats like 320 x 240 and 160 x 120 or smaller. Keywords: Uncooled microbolometer, LWIR, Amorphous silicon, IRFPA.
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uncooled amorphous silicon 1 4 vga irfpa with 25 μm Pixel Pitch for high end applications
Proceedings of SPIE the International Society for Optical Engineering, 2008Co-Authors: C Minassia, Michel Vilai, J L Tisso, O Legras, S Tinnes, Arnaud Crastes, P RobeAbstract:The high level of accumulated expertise by ULIS and CEA/LETI on uncooled microbolometers made from amorphous silicon enables ULIS to develop 1024 x 768 (XGA) IRFPAs with 17 μm Pixel-Pitch to build up the currently available product catalog. This detector has kept all the innovations developed on the full TV format Read Out Integrated Circuit (ROIC) (detector configuration by serial link, two video outputs, low power consumption and wide electrical dynamic range ...). The specific appeal of this unit lies in the high image resolution it provides. The reduction of the Pixel-Pitch turns this XGA array into a product well adapted for high resolution and compact systems. In the last part of the paper, we will look more closely at high electro-optical performances of this IRFPA; we will highlight the wide thermal dynamic range as well as the high characteristics uniformity and high Pixel operability achieved thanks to the mastering of the amorphous silicon technology coupled with the ROIC design.
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uncooled amorphous silicon tec less 1 4 vga irfpa with 25 μm Pixel Pitch for high volume applications
Proceedings of SPIE, 2008Co-Authors: A Durand, P Robe, Michel Vilai, J L Tisso, C Minassia, A Touvigno, Jeanmarc Chiappa, C PistreAbstract:The high level of accumulated expertise by ULIS on uncooled microbolometers TEC-less operation enables ULIS to develop 384 x 288 (1/4 VGA) IRFPA format with 25μm Pixel-Pitch especially designed for TEC-less application. This detector, while keeping all the performances and all the innovations developed on previous ULIS ROIC (NETD performance, detector configuration by serial link, low power consumption and wide electrical dynamic range ...), can be operated on a wide range of ambient temperature, with constant settings. We present in this paper the electro-optical performances and the TEC-less capability of this device. The thermal behavior is described in detail.
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uncooled amorphous silicon 160 x 120 irfpa with 25 μm Pixel Pitch for large volume applications
Proceedings of SPIE the International Society for Optical Engineering, 2007Co-Authors: J L Tisso, P Robe, C Minassia, O Legras, S Tinnes, Agnes ArnaudAbstract:This paper reviews specifications and performances of a 160 x 120 uncooled infrared focal plane array made from amorphous silicon micro bolometer with a Pixel-Pitch of 25 μm, integrated in a LCC package and mass production oriented. This new 25 μm Pixel design benefits from a higher Pixel thermal insulation while keeping low thermal time constant. Furthermore, we developed this new 25 μm version on the basis of the well mastered 35 μm Pixel-Pitch technology. Thanks to this new Pixel design and by pushing the design rules even further, a high fill factor has been kept, without the use of a complex, as well as an expensive, two-level structure. The detector is described in terms of readout integrated circuit (ROIC) architecture, packaging, operability and electro-optical performances. A new read out integrated circuit structure has been designed specifically for this detector. High level functions like gain, image flip and integration time could be operated through a serial link to minimize the number of electrical interconnections. In addition, a small LCC package has been developed enabling mass production dedicated to compact hand held or helmet mounted cameras.
Hidekazu Takahashi - One of the best experts on this subject based on the ideXlab platform.
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a 3 4 μm Pixel Pitch global shutter cmos image sensor with dual in Pixel charge domain memory
Japanese Journal of Applied Physics, 2019Co-Authors: M Kobayashi, Hiroshi Sekine, Takafumi Miki, Takashi Muto, Toshiki Tsuboi, Yusuke Onuki, Yasushi Matsuno, Hidekazu Takahashi, Takeshi Ichikawa, Shunsuke InoueAbstract:In this paper, we describe a newly developed 3.4 μ m Pixel Pitch global shutter CMOS image sensor (CIS) with dual in-Pixel charge domain memories (CDMEMs) has about 5.3 M effective Pixels and achieves 19 ke− full well capacity, 30 ke−/lxs sensitivity, 2.8 temporal noise, and −83 dB parasitic light sensitivity. In particular, we describe the sensor structure for improving the sensitivity and detail of the readout procedure. Furthermore, this image sensor realizes various readout with dual CDMEMs. For example, an alternate multiple-accumulation high dynamic range readout procedure achieves 60 fps operation and over 110 dB dynamic range in one-frame operation and is suitable in particular for moving object capturing. This front-side-illuminated CIS is fabricated in a 130 nm 1P4M with light shield CMOS process.
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a 1 8e _ mathrm rms temporal noise over 110 db dynamic range 3 4 mu text m Pixel Pitch global shutter cmos image sensor with dual gain amplifiers ss adc light guide structure and multiple accumulation shutter
IEEE Journal of Solid-state Circuits, 2018Co-Authors: M Kobayashi, Hiroshi Sekine, Takashi Muto, Toshiki Tsuboi, Yusuke Onuki, Yasushi Matsuno, Hidekazu Takahashi, Kazunari Kawabata, Takeshi Akiyama, Toru KoizumiAbstract:A 1.8e $^{-}_{\mathrm {rms}} $ temporal noise over 110 dB dynamic range 3.4 $\mu \text{m}$ Pixel Pitch global shutter (GS) CMOS image sensor (CIS) single-slope analog digital converters (ADCs) with dual-gain amplifier (SSDG-ADC), light guide (LG) structure, and multiple-accumulation shutter has been developed for various accuracy required applications. The newly developed CIS Pixel achieves low noise, high saturation, high sensitivity, and high frame rate with seamless GS function. Low noise, high saturation, and high frame rate are realized by small photodiode, large charge-domain memory, and seamless multiple-accumulation readout procedure with SSDG-ADC. Furthermore, high sensitivity is realized by the optimized shape LG structure. The GS CIS is fabricated in a 130 nm 1Poly-Si 4Metal with light shield CMOS process. This image sensor achieves 1.8e $^{-}_{\mathrm {rms}} $ temporal noise, 16 200e− full-well capacity with 60 fps multiple-accumulation and 28 000e−/lx $\cdot \text{s}$ sensitivity. This image sensor also realizes high-dynamic range readout procedure and in-Pixel coded exposure for deblurred images. We also describe the examination results about the relationship of the sensitivity, parasitic light sensitivity, and LG structure.
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development of gentle slope light guide structure in a 3 4 μm Pixel Pitch global shutter cmos image sensor with multiple accumulation shutter technology
Sensors, 2017Co-Authors: Hiroshi Sekine, M Kobayashi, Toshiki Tsuboi, Yusuke Onuki, Yasushi Matsuno, Hidekazu Takahashi, Shunsuke Inoue, Kazunari Kawabata, Takeshi IchikawaAbstract:CMOS image sensors (CISs) with global shutter (GS) function are strongly required in order to avoid image degradation. However, CISs with GS function have generally been inferior to the rolling shutter (RS) CIS in performance, because they have more components. This problem is remarkable in small Pixel Pitch. The newly developed 3.4 µm Pitch GS CIS solves this problem by using multiple accumulation shutter technology and the gentle slope light guide structure. As a result, the developed GS Pixel achieves 1.8 e− temporal noise and 16,200 e− full well capacity with charge domain memory in 120 fps operation. The sensitivity and parasitic light sensitivity are 28,000 e−/lx·s and −89 dB, respectively. Moreover, the incident light angle dependence of sensitivity and parasitic light sensitivity are improved by the gentle slope light guide structure.
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a 3 9 spl mu m Pixel Pitch vga format 10 b digital output cmos image sensor with 1 5 transistor Pixel
IEEE Journal of Solid-state Circuits, 2004Co-Authors: Hidekazu Takahashi, Shunsuke Inoue, Masakuni Kinoshita, Kazumichi Morita, Takahiro Shirai, Toshiaki Sato, Takayuki Kimura, Hiroshi Yuzurihara, Shigeyuki MatsumotoAbstract:A 3.9-/spl mu/m Pixel Pitch VGA format 10-b digital output CMOS image sensor with 1.5 transistor/Pixel has been developed for mobile applications. The newly developed CMOS Pixel architecture realizes the minimum number of the transistors in one Pixel. Small Pixel size and sufficient fill factor are achieved by using the shared Pixel architecture and floating diffusion driving. High conversion gain, low random noise, and low dark current are achieved by buried photodiode with complete charge transfer capability and correlated double sampling (CDS) circuit. The image sensor is fabricated in a thin planarized 0.35-/spl mu/m single poly-Si double-metal customized CMOS process in order to provide good image performance. The image sensor achieves low noise floor of 330 /spl mu/V and low dark current of 50 pA/cm/sup 2/ at 45/spl deg/C. This image sensor also realized various functions by on-chip digital and analog circuits.
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a 3 9 spl mu m Pixel Pitch vga format 10 b digital image sensor with 1 5 transistor Pixel
International Solid-State Circuits Conference, 2004Co-Authors: Hidekazu Takahashi, Masakuni Kinoshita, Kazumichi Morita, Takahiro Shirai, Toshiaki Sato, Takayuki Kimura, Hiroshi Yuzurihara, Shunsuke InoueAbstract:A CMOS image sensor with a shared 1.5 transistor/Pixel architecture and buried photodiode with complete charge transfer capability is described. The sensor achieves a 330 /spl mu/V noise floor and 50 pA/cm/sup 2/ dark current at 45/spl deg/C. The chip is fabricated in a thin planarized 0.35 /spl mu/m 1P2M CMOS process.
Haruyoshi Katayama - One of the best experts on this subject based on the ideXlab platform.
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two million Pixel soi diode uncooled irfpa with 15μm Pixel Pitch
Proceedings of SPIE, 2012Co-Authors: Daisuke Fujisawa, Tomohiro Maegawa, Yasuaki Ohta, Yasuhiro Kosasayama, Takahiro Ohnakado, Hisatoshi Hata, Masashi Ueno, Hiroshi Ohji, Ryota Sato, Haruyoshi KatayamaAbstract:We report the development of a 2-million-Pixel, that is, a 2000 x 1000 array format, SOI diode uncooled IRFPA with 15 mm Pixel Pitch. The combination of the shrinkable 2-in-1 SOI diode Pixel technology, which we proposed last year [1], and the uncooled IRFPA stitching technology has successfully achieved a 2-million-Pixel array format. The chip size is 40.30 mm x 24.75 mm. Ten-series diodes are arranged in a 15 mm Pixel. In spite of the increase to 2-million-Pixels, a frame rate of 30 Hz, which is the same frame rate as our former generation (25 mm Pixel Pitch) VGA IRFPA, can be supported by the adoption of readout circuits with four outputs. NETDs are designed to be 60 mK (f/1.0, 15 Hz) and 84 mK (f/1.0, 30 Hz), respectively and a tth is designed to be 12 msec. We performed the fabrication of the 2-million-Pixel SOI diode uncooled IRFPAs with 15 mm Pixel Pitch, and confirmed favorable diode Pixel characteristics and IRFPA operation where the evaluated NETD and tth were 65 mK (f/1.0, 15 Hz) and 12 msec, respectively.© (2012) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
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development of new soi diode structure for beyond 17 μm Pixel Pitch soi diode uncooled irfpas
Proceedings of SPIE, 2011Co-Authors: Daisuke Takamuro, Tomohiro Maegawa, Yasuhiro Kosasayama, Takahiro Ohnakado, Hisatoshi Hata, Masashi Ueno, Takaki Sugino, Hiroshi Fukumoto, Kozo Ishida, Haruyoshi KatayamaAbstract:Scalable new SOI diode structure has been proposed and developed for beyond 17μm Pixel Pitch mega-Pixel-class SOI diode uncooled infrared focal plane arrays (IRFPAs). Conventionally, each p + n vertical diode is formed between a p + diffusion and an n-body in each SOI active area, and 8-10 diodes are serially connected with interconnections. In the proposed new structure, we employ two kinds of diodes, namely, p + n and n + p vertical diodes. First, two regions of an nbody and a p-body are prepared in an SOI active area. In the n-body, a p + diffusion is formed apart from the n-body /pbody boundary. In the p-body, an n+ diffusion is formed apart from the boundary. In this way, a p + n vertical diode and an n+p vertical diode are formed together in an SOI active area. Moreover, a contact hole, which is formed in touch with both n- and p-bodies, electrically connects these two kinds of diodes. With this new structure which is named "new 2-in- 1 SOI diode structure", we have realized remarkable reduction of the diode area. It leads to significant increase of the diode series number in a Pixel, which increases infrared responsivity of the Pixel. As a result, designing a 15μm Pixel Pitch IRFPA with the new structure, 12 series diodes can be arranged in a Pixel, although 10 series diodes have been used even in the case of our 25μm Pitch generation Pixel. To confirm the ability of the new diodes, test elements of 12-17μm Pitch Pixels were fabricated and evaluated. Furthermore, the fabrication of 17μm Pixel Pitch 320 x 240 IRFPAs with the new diodes was carried out and their favorable FPA operations were successfully verified. In conclusion, the proposed and developed new SOI diode technology is very promising for beyond 17μm Pixel Pitch mega-Pixel-class uncooled IRFPAs.
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uncooled infrared detectors toward smaller Pixel Pitch with newly proposed Pixel structure
Proceedings of SPIE, 2011Co-Authors: Shigeru Tohyama, Tsutomu Endoh, Takao Yamazaki, Seiji Kurashina, Masaru Miyoshi, Kouji Katoh, T Sasaki, Masahiko Sano, Munetaka Ueno, Haruyoshi KatayamaAbstract:Since authors have successfully demonstrated uncooled infrared (IR) focal plane array (FPA) with 23.5 um Pixel Pitch, it has been widely utilized for commercial applications such as thermography, security camera and so on. One of the key issues for uncooled IR detector technology is to shrink the Pixel size. The smaller the Pixel Pitch, the more the IR camera products become compact and the less cost. This paper proposes a new Pixel structure with a diaphragm and beams which are placed in different level, to realize an uncooled IRFPA with smaller Pixel Pitch )≤17 μm). The upper level consists of diaphragm with VOx bolometer and IR absorber layers, while the lower level consists of the two beams, which are designed to place on the adjacent Pixels. The test devices of this Pixel design with 12 um, 15 um and 17 um Pitch have been fabricated on the Si ROIC of QVGA (320 × 240) with 23.5 um Pitch. Their performances reveal nearly equal to the IRFPA with 23.5 um Pitch. For example, noise equivalent temperature difference (NETD) of 12 μm Pixel is 63.1 mK with thermal time constant of 14.5 msec. In addition, this new structure is expected to be more effective for the existing IRFPA with 23.5 um Pitch in order to improve the IR responsivity.
Shunsuke Inoue - One of the best experts on this subject based on the ideXlab platform.
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a 3 4 μm Pixel Pitch global shutter cmos image sensor with dual in Pixel charge domain memory
Japanese Journal of Applied Physics, 2019Co-Authors: M Kobayashi, Hiroshi Sekine, Takafumi Miki, Takashi Muto, Toshiki Tsuboi, Yusuke Onuki, Yasushi Matsuno, Hidekazu Takahashi, Takeshi Ichikawa, Shunsuke InoueAbstract:In this paper, we describe a newly developed 3.4 μ m Pixel Pitch global shutter CMOS image sensor (CIS) with dual in-Pixel charge domain memories (CDMEMs) has about 5.3 M effective Pixels and achieves 19 ke− full well capacity, 30 ke−/lxs sensitivity, 2.8 temporal noise, and −83 dB parasitic light sensitivity. In particular, we describe the sensor structure for improving the sensitivity and detail of the readout procedure. Furthermore, this image sensor realizes various readout with dual CDMEMs. For example, an alternate multiple-accumulation high dynamic range readout procedure achieves 60 fps operation and over 110 dB dynamic range in one-frame operation and is suitable in particular for moving object capturing. This front-side-illuminated CIS is fabricated in a 130 nm 1P4M with light shield CMOS process.
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development of gentle slope light guide structure in a 3 4 μm Pixel Pitch global shutter cmos image sensor with multiple accumulation shutter technology
Sensors, 2017Co-Authors: Hiroshi Sekine, M Kobayashi, Toshiki Tsuboi, Yusuke Onuki, Yasushi Matsuno, Hidekazu Takahashi, Shunsuke Inoue, Kazunari Kawabata, Takeshi IchikawaAbstract:CMOS image sensors (CISs) with global shutter (GS) function are strongly required in order to avoid image degradation. However, CISs with GS function have generally been inferior to the rolling shutter (RS) CIS in performance, because they have more components. This problem is remarkable in small Pixel Pitch. The newly developed 3.4 µm Pitch GS CIS solves this problem by using multiple accumulation shutter technology and the gentle slope light guide structure. As a result, the developed GS Pixel achieves 1.8 e− temporal noise and 16,200 e− full well capacity with charge domain memory in 120 fps operation. The sensitivity and parasitic light sensitivity are 28,000 e−/lx·s and −89 dB, respectively. Moreover, the incident light angle dependence of sensitivity and parasitic light sensitivity are improved by the gentle slope light guide structure.
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a 3 9 spl mu m Pixel Pitch vga format 10 b digital output cmos image sensor with 1 5 transistor Pixel
IEEE Journal of Solid-state Circuits, 2004Co-Authors: Hidekazu Takahashi, Shunsuke Inoue, Masakuni Kinoshita, Kazumichi Morita, Takahiro Shirai, Toshiaki Sato, Takayuki Kimura, Hiroshi Yuzurihara, Shigeyuki MatsumotoAbstract:A 3.9-/spl mu/m Pixel Pitch VGA format 10-b digital output CMOS image sensor with 1.5 transistor/Pixel has been developed for mobile applications. The newly developed CMOS Pixel architecture realizes the minimum number of the transistors in one Pixel. Small Pixel size and sufficient fill factor are achieved by using the shared Pixel architecture and floating diffusion driving. High conversion gain, low random noise, and low dark current are achieved by buried photodiode with complete charge transfer capability and correlated double sampling (CDS) circuit. The image sensor is fabricated in a thin planarized 0.35-/spl mu/m single poly-Si double-metal customized CMOS process in order to provide good image performance. The image sensor achieves low noise floor of 330 /spl mu/V and low dark current of 50 pA/cm/sup 2/ at 45/spl deg/C. This image sensor also realized various functions by on-chip digital and analog circuits.
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a 3 9 spl mu m Pixel Pitch vga format 10 b digital image sensor with 1 5 transistor Pixel
International Solid-State Circuits Conference, 2004Co-Authors: Hidekazu Takahashi, Masakuni Kinoshita, Kazumichi Morita, Takahiro Shirai, Toshiaki Sato, Takayuki Kimura, Hiroshi Yuzurihara, Shunsuke InoueAbstract:A CMOS image sensor with a shared 1.5 transistor/Pixel architecture and buried photodiode with complete charge transfer capability is described. The sensor achieves a 330 /spl mu/V noise floor and 50 pA/cm/sup 2/ dark current at 45/spl deg/C. The chip is fabricated in a thin planarized 0.35 /spl mu/m 1P2M CMOS process.
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a 3 9 μm Pixel Pitch vga format 10 b digital output cmos image sensor with 1 5 transistor Pixel
International Solid-State Circuits Conference, 2004Co-Authors: Hidekazu Takahashi, Shunsuke Inoue, Masakuni Kinoshita, Kazumichi Morita, Takahiro Shirai, Toshiaki Sato, Takayuki Kimura, Hiroshi Yuzurihara, Shigeyuki MatsumotoAbstract:A 3.9-μm Pixel Pitch VGA format 10-b digital output CMOS image sensor with 1.5 transistor/Pixel has been developed for mobile applications. The newly developed CMOS Pixel architecture realizes the minimum number of the transistors in one Pixel. Small Pixel size and sufficient fill factor are achieved by using the shared Pixel architecture and floating diffusion driving. High conversion gain, low random noise, and low dark current are achieved by buried photodiode with complete charge transfer capability and correlated double sampling (CDS) circuit. The image sensor is fabricated in a thin planarized 0.35-μm single poly-Si double-metal customized CMOS process in order to provide good image performance. The image sensor achieves low noise floor of 330 μV and low dark current of 50 pA/cm 2 at 45 °C. This image sensor also realized various functions by on-chip digital and analog circuits.
P Robe - One of the best experts on this subject based on the ideXlab platform.
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high performance uncooled amorphous silicon tec less xga irfpa with 17μm Pixel Pitch
Proceedings of SPIE, 2010Co-Authors: C Trouilleau, S Noble, F Gine, D Pochic, A Durand, P Robe, S Cortial, Michel Vilai, J L TissoAbstract:ABSTRACT The high level of accumulated expertise by ULIS and CE A/LETI on uncooled microbolom eters made from amorphous silicon with 45µm, 35µm and 25µm, enables ULIS to devel op VGA and XGA IRFP A formats with 17µm Pixel-Pitch to fulfill every applications. These detector keeps all the recent innovations developed on the 25µm Pixel-Pitch ROIC (detector configuration by serial link, low power consump tion and wide electrical dynami c range). The specific appeal of these units lies in the high spatial resolution it provides while keeping the small thermal time constant. The reduction of the Pixel-Pitch turns the TEC-less VGA array into a product well adapted for high resolution and compact systems and the XGA a product well adapted for high resolution imaging systems. High electro-optical performances have been demonstrated with NETD < 50mK. We insist on NETD and wide thermal dynamic range trade-off, and on the high characteristics uniformity, achieved thanks to the mastering of the amorphous silicon technology as well as the ROIC design. This technology node paves the way to high end products as well as low end compact smaller formats like 320 x 240 and 160 x 120 or smaller. Keywords: Uncooled microbolometer, LWIR, Amorphous silicon, IRFPA.
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uncooled amorphous silicon 1 4 vga irfpa with 25 μm Pixel Pitch for high end applications
Proceedings of SPIE the International Society for Optical Engineering, 2008Co-Authors: C Minassia, Michel Vilai, J L Tisso, O Legras, S Tinnes, Arnaud Crastes, P RobeAbstract:The high level of accumulated expertise by ULIS and CEA/LETI on uncooled microbolometers made from amorphous silicon enables ULIS to develop 1024 x 768 (XGA) IRFPAs with 17 μm Pixel-Pitch to build up the currently available product catalog. This detector has kept all the innovations developed on the full TV format Read Out Integrated Circuit (ROIC) (detector configuration by serial link, two video outputs, low power consumption and wide electrical dynamic range ...). The specific appeal of this unit lies in the high image resolution it provides. The reduction of the Pixel-Pitch turns this XGA array into a product well adapted for high resolution and compact systems. In the last part of the paper, we will look more closely at high electro-optical performances of this IRFPA; we will highlight the wide thermal dynamic range as well as the high characteristics uniformity and high Pixel operability achieved thanks to the mastering of the amorphous silicon technology coupled with the ROIC design.
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uncooled amorphous silicon tec less 1 4 vga irfpa with 25 μm Pixel Pitch for high volume applications
Proceedings of SPIE, 2008Co-Authors: A Durand, P Robe, Michel Vilai, J L Tisso, C Minassia, A Touvigno, Jeanmarc Chiappa, C PistreAbstract:The high level of accumulated expertise by ULIS on uncooled microbolometers TEC-less operation enables ULIS to develop 384 x 288 (1/4 VGA) IRFPA format with 25μm Pixel-Pitch especially designed for TEC-less application. This detector, while keeping all the performances and all the innovations developed on previous ULIS ROIC (NETD performance, detector configuration by serial link, low power consumption and wide electrical dynamic range ...), can be operated on a wide range of ambient temperature, with constant settings. We present in this paper the electro-optical performances and the TEC-less capability of this device. The thermal behavior is described in detail.
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uncooled amorphous silicon 160 x 120 irfpa with 25 μm Pixel Pitch for large volume applications
Proceedings of SPIE the International Society for Optical Engineering, 2007Co-Authors: J L Tisso, P Robe, C Minassia, O Legras, S Tinnes, Agnes ArnaudAbstract:This paper reviews specifications and performances of a 160 x 120 uncooled infrared focal plane array made from amorphous silicon micro bolometer with a Pixel-Pitch of 25 μm, integrated in a LCC package and mass production oriented. This new 25 μm Pixel design benefits from a higher Pixel thermal insulation while keeping low thermal time constant. Furthermore, we developed this new 25 μm version on the basis of the well mastered 35 μm Pixel-Pitch technology. Thanks to this new Pixel design and by pushing the design rules even further, a high fill factor has been kept, without the use of a complex, as well as an expensive, two-level structure. The detector is described in terms of readout integrated circuit (ROIC) architecture, packaging, operability and electro-optical performances. A new read out integrated circuit structure has been designed specifically for this detector. High level functions like gain, image flip and integration time could be operated through a serial link to minimize the number of electrical interconnections. In addition, a small LCC package has been developed enabling mass production dedicated to compact hand held or helmet mounted cameras.
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first demonstration of 640 x 480 uncooled amorphous silicon irfpa with 25 μm Pixel Pitch
Society of Photo-Optical Instrumentation Engineers (SPIE) Conference Series, 2006Co-Authors: J L Tisso, C Trouilleau, P Robe, C Minassia, Arnaud Crastes, O LegrasAbstract:This paper reviews characteristics and performance of the first 640 x 480 made from amorphous silicon microbolometers with a Pixel-Pitch of 25 μm. The full TV format IRFPA product is then described in terms of ROIC architecture, packaging, operability and electro-optical performances. The Pixel architecture profits from the low thermal time constant which characterizes the amorphous silicon technology, to design a high performance 640 x 480 array. A new read out integrated circuit structure has been specially developed for this array. High level functions like gain, windowing and image flip could be operated through a serial link to minimize the number of electrical interconnections. At a 60Hz frame rate, focal planes with NETD less than 50mK (f/1) are now achieved with low spatial fixed pattern noise after sensor gain and offset compensation. Thanks to a new Pixel design and by pushing the design rules even further, a high fill factor has been kept, without the use of complex, as well as expensive, two-level structure. This new detector has been qualified for production since September 2005.
