The Experts below are selected from a list of 30312 Experts worldwide ranked by ideXlab platform

M. Hafizi - One of the best experts on this subject based on the ideXlab platform.

  • new submicron hbt ic technology demonstrates ultra fast low Power Integrated Circuits
    IEEE Transactions on Electron Devices, 1998
    Co-Authors: M. Hafizi
    Abstract:

    A new submicron HBT-based Integrated circuit technology has been developed to fabricate transistors as small as 0.2 /spl mu/m/sup 2/ emitter geometry. Using this novel process approach we have been able to reduce our minimum device geometry by a factor of more than ten, and reduce the metallization pitch by a factor of two compared to our baseline process. At the same time, the device RF performance improved by a factor of two. Submicron heterojunction bipolar transistors (HBT's) fabricated with this process exhibited f/sub T/ and f/sub max/ values greater than 165 and 140 GHz, respectively, and dc current gain of over 50. We have also demonstrated several Circuits using submicron HBT's in this new IC technology. In particular, a latching comparator circuit which is a key building block of analog-to-digital converters, performed at 40 GHz. It exhibited three times the speed, one-third the dc Power, and one-third the chip size of a similar circuit in our baseline process. A single-chip, PLL-based clock and data recovery circuit was fully functional at 4 GHz with a Power supply voltage of 2.5 V. It consumed a total dc Power of 50 mW, including input and output buffers.

  • Ultra-fast, low-Power Integrated Circuits in a scaled submicron HBT IC technology
    1997 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium. Digest of Technical Papers, 1
    Co-Authors: M. Hafizi, J.f. Jensen
    Abstract:

    We have developed fast, dense, and low-Power Integrated Circuits using a new scaled IC process. We have fabricated HBTs of 0.3 /spl mu/m/sup 2/ emitter and circuit metalization pitch of 4 /spl mu/m to reduce Power and compact the chip size. Submicron HBTs exhibited f/sub T/ of over 160 GHz. We have demonstrated a number of Circuits including a low-Power comparator test chip clocked at 40 GHz.

Elison Matioli - One of the best experts on this subject based on the ideXlab platform.

  • Ultra-compact, High-Frequency Power Integrated Circuits Based on GaN-on-Si Schottky Barrier Diodes
    IEEE Transactions on Power Electronics, 2021
    Co-Authors: Luca Nela, Georgios Kampitsis, Halil Kerim Yildirim, Remco Van Erp, Elison Matioli
    Abstract:

    Gallium nitride (GaN) transistors are being employed in an increasing number of applications thanks to their excellent performance and competitive price. Yet, GaN diodes are not commercially available, and little is known about their performance and potential impact on Power circuit design. In this article, we demonstrate scaled-up GaN-on-Si Tri-Anode Schottky barrier diodes (SBDs), whose excellent dc and switching performance are compared to commercial Si fast-recovery diodes and SiC SBDs. Moreover, the advantageous lateral GaN-on-Si architecture enables the integration of several devices on the same chip, paving the way for Power Integrated Circuits (ICs). This is demonstrated by realizing a diode-multiplier IC, which includes up to eight monolithically Integrated SBDs on the same chip. The IC was Integrated on a dc-dc magnetic-less boost converter able to operate at a frequency of 1 MHz. The IC performance and footprint are compared to the same circuit realized with discrete Si and SiC vertical devices, showing the potential of GaN Power ICs for efficient and compact Power converters.

  • High-Frequency GaN-on-Si Power Integrated Circuits based on Tri-Anode SBDs
    2020 32nd International Symposium on Power Semiconductor Devices and ICs (ISPSD), 2020
    Co-Authors: Luca Nela, Georgios Kampitsis, Halil Kerim Yildirim, Remco Van Erp, Elison Matioli
    Abstract:

    In this work, we report on the switching performance of AlGaN/GaN lateral Tri-Anode SBDs. The Tri-Anode architecture leads to a more than 50% reduction in the device charge with respect to conventional planar structure, confirmed both by capacitive and reverse-recovery measurements, which results in a much improved RON·Qrr figure-of-merit. The Tri-Anode excellent switching performance, combined with the superior DC behavior, makes these devices very promising for future ultra-fast and high-Power applications. The diode performance was demonstrated by realizing a monolithically-Integrated Diode Bridge Rectifier able to operate at high frequency and achieve AC to DC conversion. These results reveal the outstanding potential of GaN Tri-Anode SBD for ultrafast, large Power-density and high-efficiency future Power Integrated Circuits.

Judy L. Sutor - One of the best experts on this subject based on the ideXlab platform.

  • Industry trends in Power Integrated Circuits
    Technical Digest. International Electron Devices Meeting, 1
    Co-Authors: Stephen P. Robb, Judy L. Sutor, Lewis E. Terry
    Abstract:

    The authors consider some of the recent trends in Power Integrated Circuits. They discuss the novel processes and device configurations which the semiconductor industry is developing to meet the needs of customers. Also included is a qualitative look at the design tradeoffs which influence the choice of technology for a particular application. The movement toward high-performance and higher-density circuitry, which demands smaller geometries and sophisticated processing, is also discussed. Particular attention is given to smart Power (smart discrete devices and Integrated Circuits), multiple-output technology, high-voltage junction isolation, and high-voltage dielectric isolation. >

  • Recent advances in Power Integrated Circuits with high level integration
    Proceedings of the 6th International Symposium on Power Semiconductor Devices and Ics, 1
    Co-Authors: Stephen P. Robb, Judy L. Sutor
    Abstract:

    This paper describes some of the latest advances in the field of Power Integrated Circuits. The recent market forces and applications that drive the Power IC technologies are identified. The Power IC technologies that serve these applications are described and reasons are given why a particular technology is used for a given application.

Florin Udrea - One of the best experts on this subject based on the ideXlab platform.

  • Partial SOI as a HV platform technology for Power Integrated Circuits
    2020 32nd International Symposium on Power Semiconductor Devices and ICs (ISPSD), 2020
    Co-Authors: Alexander Holke, Marina Antoniou, Florin Udrea
    Abstract:

    Partial SOI (PSOI) is revisited as a suitable High Voltage (HV) architecture for Power Integrated Circuits (PICs). The added process complexity compared to SOI RESURF is offset by the better heat conduction due to thinner BOX, the wider voltage range capability and the reduced parasitic capacitance to the Handle Wafer (HW). The new proposed platform technology is therefore particularly relevant to the manufacturing of high voltage Integrated Circuits (HVICs) where low Ron, fast switching and reduced self-heating are essential. This work reports on the extension of a 200V PSOI process to 400V while providing competitive Ron and low HCI degradation.

  • Silicon-on-insulator Power Integrated Circuits
    Microelectronics Journal, 2001
    Co-Authors: D.m. Garner, Florin Udrea, Kuang Sheng, H.t Lim, G. Ensell, A. Popescu, William I. Milne
    Abstract:

    A Power Integrated circuit process has been developed, based on silicon-on-insulator, which allows intelligent CMOS control circuitry to be placed alongside Integrated high-voltage Power devices. A breakdown voltage of 335 V has been obtained by using a silicon layer of 4 μm thickness together with a buried oxide layer of 3 μm thickness. The respective LDMOS specific on-resistance and LIGBT on-state voltage for this breakdown voltage were 148 mΩ cm2 and 3.9 V, respectively.

  • Power Integrated Circuits: devices and applications
    Proceedings of the 1999 Bipolar BiCMOS Circuits and Technology Meeting (Cat. No.99CH37024), 1
    Co-Authors: Gehan A. J. Amaratunga, Florin Udrea, Richard A. Mcmahon
    Abstract:

    This paper is concerned with recent trends in high voltage devices for Integrated Circuits and prospective industrial applications of high voltage Power Integrated Circuits. New device concepts are explored in comparison with classical LDMOSFETs and LIGBTs. Alternative technologies to the conventional junction-isolation technology, such as high voltage SOI technology are also briefly analysed.

  • Advanced 3D RESURF devices for Power Integrated Circuits
    Proceedings. International Semiconductor Conference, 1
    Co-Authors: Florin Udrea
    Abstract:

    Power Integrated Circuits will be an area of high growth in IT and consumer products due to several factors, among which the following play the crucial role: regulations for increased efficiency, the need for smart features and high reliability, reduced size and weight, and all at a reduced unit cost. This paper is concerned with recent trends in high voltage devices for high voltage Integrated Circuits and in particular the application of the RESURF effect to the third dimension for a significant increase in the breakdown capability of lateral devices. New 3D device concepts are presented in comparison with classical LDMOSFETs and LIGBTs.

  • Power devices for high voltage Integrated Circuits: new device and technology concepts
    2001 International Semiconductor Conference. CAS 2001 Proceedings (Cat. No.01TH8547), 1
    Co-Authors: Gehan A. J. Amaratunga, Florin Udrea
    Abstract:

    Power electronic devices and Power Integrated Circuits will play a crucial role in increasing the efficiency with which electric Power is consumed. This paper is concerned with recent trends in high voltage devices for Integrated Circuits and prospective industrial applications of high voltage Power Integrated Circuits. New device concepts are explored in comparison with classical LDMOSFETs and LIGBTs. Alternative technologies to the conventional junction-isolation technology, such as high voltage SOI technology are also briefly analysed.

Stephen P. Robb - One of the best experts on this subject based on the ideXlab platform.

  • Industry trends in Power Integrated Circuits
    Technical Digest. International Electron Devices Meeting, 1
    Co-Authors: Stephen P. Robb, Judy L. Sutor, Lewis E. Terry
    Abstract:

    The authors consider some of the recent trends in Power Integrated Circuits. They discuss the novel processes and device configurations which the semiconductor industry is developing to meet the needs of customers. Also included is a qualitative look at the design tradeoffs which influence the choice of technology for a particular application. The movement toward high-performance and higher-density circuitry, which demands smaller geometries and sophisticated processing, is also discussed. Particular attention is given to smart Power (smart discrete devices and Integrated Circuits), multiple-output technology, high-voltage junction isolation, and high-voltage dielectric isolation. >

  • Recent advances in Power Integrated Circuits with high level integration
    Proceedings of the 6th International Symposium on Power Semiconductor Devices and Ics, 1
    Co-Authors: Stephen P. Robb, Judy L. Sutor
    Abstract:

    This paper describes some of the latest advances in the field of Power Integrated Circuits. The recent market forces and applications that drive the Power IC technologies are identified. The Power IC technologies that serve these applications are described and reasons are given why a particular technology is used for a given application.