Scanning Thermal Microscopy

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Cagliyan Kurdak - One of the best experts on this subject based on the ideXlab platform.

Séverine Gomès - One of the best experts on this subject based on the ideXlab platform.

  • Calibration Tools for Scanning Thermal Microscopy Probes Used in Temperature Measurement Mode
    Journal of Heat Transfer-transactions of The Asme, 2019
    Co-Authors: Tran Phong Nguyen, Séverine Gomès, Lionel Aigouy, L. Thiery, Sébastien Euphrasie, Etienne Lemaire, Saleem Khan, Danick Briand, Pascal Vairac
    Abstract:

    We demonstrate the functionality of a new active Thermal microchip dedicated to the temperature calibration of Scanning Thermal Microscopy (SThM) probes. The silicon micromachined device consists in a suspended thin dielectric membrane in which a heating resistor with a circular area of 50 μm in diameter was embedded. A circular calibration target of 10 μm in diameter was patterned at the center and on top of the membrane on which the SThM probe can land. This target is a resistive temperature detector (RTD) that measures the surface temperature of the sample at the level of the contact area. This allows evaluating the ability of any SThM probe to measure a surface temperature in ambient air conditions. Furthermore, by looking at the Thermal balance of the device, the heat dissipated through the probe and the different Thermal resistances involved at the contact can be estimated. A comparison of the results obtained for two different SThM probes, microthermocouples and probes with a fluorescent particle is presented to validate the functionality of the micromachined device. Based on experiments and simulations, an analysis of the behavior of probes allows pointing out their performances and limits depending on the sample characteristics whose role is always preponderant. Finally, we also show that a smaller area of the temperature sensor would be required to assess the local disturbance at the contact point.

  • A dark mode in Scanning Thermal Microscopy.
    Review of Scientific Instruments, 2017
    Co-Authors: Liana Ramiandrisoa, Alexandre Allard, Youssef Joumani, Séverine Gomès
    Abstract:

    The need for high lateral spatial resolution in Thermal science using Scanning Thermal Microscopy (SThM) has pushed researchers to look for more and more tiny probes. SThM probes have consequently become more and more sensitive to the size effects that occur within the probe, the sample, and their interaction. Reducing the tip furthermore induces very small heat flux exchanged between the probe and the sample. The measurement of this flux, which is exploited to characterize the sample Thermal properties, requires then an accurate Thermal management of the probe-sample system and to reduce any phenomenon parasitic to this system. Classical experimental methodologies must then be constantly questioned to hope for relevant and interpretable results. In this paper, we demonstrate and estimate the influence of the laser of the optical force detection system used in the common SThM setup that is based on atomic-force Microscopy equipment on SThM measurements. We highlight the bias induced by the overheating due...

  • Uncertainty assessment for measurements performed in the determination of Thermal conductivity by Scanning Thermal Microscopy
    Measurement Science and Technology, 2017
    Co-Authors: Liana Ramiandrisoa, Alexandre Allard, Séverine Gomès
    Abstract:

    Although its use has been restricted to relative studies, Scanning Thermal Microscopy (SThM) is presented today as a candidate technique for performing quantitative measurement of Thermal properties at the nanoscale, thanks to the development of relevant calibration protocols. Based on the principle behind near-field microscopes, SThM uses a miniaturized probe to quantify heat transfers versus samples of various Thermal conductivities: since the Thermal conductivity of a sample cannot be directly estimated, a direct measurand related to the heat transfer must be defined and measured for each sample. That is the reason why the SThM technique applied to Thermal conductivity determination belongs to the family of inverse methods. In this work we aim to qualify the technique from a metrological point of view. For the first time, assessment of uncertainty associated with the direct measurand is performed, yielding a result of less than 2%.

  • Calibration methodologies for Scanning Thermal Microscopy
    2016 22nd International Workshop on Thermal Investigations of ICs and Systems (THERMINIC), 2016
    Co-Authors: Eloïse Guen, Pierre-olivier Chapuis, David Renahy, Mouhannad Massoud, Jean-marie Bluet, Séverine Gomès
    Abstract:

    This work analyses the heat transfer between various Scanning Thermal Microscopy (SThM) probes and samples. In order to perform quantitative measurements with SThM techniques, we have developed well-established and reproducible calibration methodologies. We present here two approaches of the SThM measurement: one to measure Thermal conductivity of solid materials with a Wollaston SThM microprobe and a second one to evaluate phase transition temperatures of polymeric materials with a silicon low-doped nanoprobe. Based on the comparison of experimental data and modeling results, we have estimated the local resolution of the microprobe to be associated to a radius of 300 nm. Concerning the nanoprobe, we have demonstrated the strong dependence of measurement on sample topography and roughness.

  • Chapter 9:Scanning Thermal Microscopy
    Thermometry at the Nanoscale, 2015
    Co-Authors: Séverine Gomès, Ali Assy, Pierre-olivier Chapuis
    Abstract:

    Scanning Thermal Microscopy (SThM) allows nanoscale temperature and heat flow measurements as well as Thermal characterization of materials. This chapter focuses on fundamentals and applications of SThM methods. It reviews the main Scanning Probe Microscopy techniques developed for Thermal imaging with nanoscale spatial resolution and presents selected SThM applications. After reviewing the fundamentals of Thermal metrology by contact, it describes the approaches currently used to calibrate SThM probes. In many cases, the link between the nominal measured signal and the investigated parameter is not yet fully understood, due to the complexity of the micro-/nanoscale interaction between the probe and the sample. Special attention is given to this interaction, which conditions the tip–sample interface temperature. Some examples of the main applications of SThM are presented. Finally, future challenges and opportunities for SThM are discussed.

Angelo Gaitas - One of the best experts on this subject based on the ideXlab platform.

Oleg Kolosov - One of the best experts on this subject based on the ideXlab platform.

  • Scanning Thermal Microscopy and finite elements studies of 2D materials
    2020
    Co-Authors: Benjamin J. Robinson, Peter Tovee, Jean Spiece, Oleg Kolosov
    Abstract:

    Understanding Thermal properties at the nanoscale is of fundamental importance for the development of next generation nanodevices, where ballistic transport is expected to dominate bulk-like diffusive and convective transport and may, indeed, be quantised. Here we report the exploration of the Thermal properties of graphene, MoS2 and other 2D materials from monolayer to bulk using experimental nanoscale Scanning Thermal Microscopy (SThM) correlated with finite elements (FE) simulations. SThM is a modification of the more well-known Atomic Force Microscope employing a self-heated probe which is used to scan the sample; during probe-sample contact the corresponding drop in probe temperature can be electronically monitored and directly related to changes in the Thermal properties. FE simulations and analytical calculations were performed to correlate the measured properties of our systems with variations of graphene’s isotropy and anisoptropy as well as substrate interactions. We have investigated how these 2D materials Thermal properties change as a function of sample thickness on substrates of both high and low Thermal conductivities. We observe well defined values of Thermal conductance for monolayer and near monolayer thicknesses, however unlike graphene where Thermal conductance decreases with layer number other materials do not show this monotonic behaviours – for example MoS2 demonstrates a drop in Thermal conductance ~10% from mono- to tri-layer. We discuss and compare experimental considerations and simulation outputs in order to construct a Thermal conductance models to explain these interesting results which takes into account the competing lateral and normal conductance pathways.

  • Scanning Thermal Microscopy studies of 2D materials
    2020
    Co-Authors: Benjamin J. Robinson, Peter Tovee, Oleg Kolosov
    Abstract:

    Measurement of Thermal properties at the nanoscale presents a number if unique challenges. Here we report the exploration of the Thermal properties of a range of 2D materials using Scanning Thermal Microscopy (SThM) on the length scale of ca. 0.3nm (monolayer) incrementally to bulk. Materials include graphene, MoS2, Bi2Se3, GaTe, GaS and GaSe. SThM is a modification of the more well-known Atomic Force Microscope (AFM) employing a self-heated probe which is bought into contact with the sample correspondingly causing a drop in the probe temperature which can be electronically monitored and interpreted to understand the samples Thermal properties. We have investigated how these properties change as a function of sample thickness for the range of 2D materials listed above on substrates of both high and low Thermal conductivity. We observe well defined values of Thermal conductance for monolayer and near monolayer thicknesses, however some materials show increased conductance at increasing multilayers whilst others show a decrease – in most cases the conductance does not scale simply with thickness. We will discuss experimental considerations and possible Thermal conductance models to explain these interesting results and describe a new approach for Thermal quantification – Force Spectroscopy SThM.

  • Scanning Thermal Microscopy on 2D Materials at cryogenic temperatures
    2017
    Co-Authors: Charalambos Evangeli, Jean Spiece, Alexander James Robson, Oleg Kolosov
    Abstract:

    Thermal transport in Graphene is of great interest due to its high Thermal conductivity, for both fundamental research and future applications such as heat dissipation in electronic devices. Although, the Thermal conductivity of graphene can reduce depending on the coupling to the substrate [1]. In this work, we report high-resolution imaging of nanoscale Thermal transport in single and few layers of Graphene on Silicon Oxide (SiO2) and hexagonal Boron Nitride (hBN), by Scanning Thermal Microscopy (SThM) in high vacuum. SThM is a leading technique for mapping Thermal properties with nanoscale resolution [2], consisting of a self-heated probe which acts as a thermosensor during sample Scanning. By using doped Si probes and cooling the sample down to 150K,we mapped the Thermal resistance of Graphene layers on SiO2 and hBN with sub-10nm resolution. We observed that Thermal transport in these layers changes at the elastically deformed areas, which were formed during deposition in the form of bubbles [3]. More specifically, the Thermal conductance at the center of the bubbles increases with their surface area. In addition, we study the effect of the sample temperature and the substrate on the Thermal conductance of the graphene layers.

  • nanoThermal characterization of amorphous and crystalline phases in chalcogenide thin films with Scanning Thermal Microscopy
    Journal of Applied Physics, 2014
    Co-Authors: James L Bosse, Maria Timofeeva, Benjamin J. Robinson, Peter Tovee, Bryan D Huey, Oleg Kolosov
    Abstract:

    The Thermal properties of amorphous and crystalline phases in chalcogenide phase change materials (PCM) play a key role in device performance for non-volatile random-access memory. Here, we report the nanoThermal morphology of amorphous and crystalline phases in laser pulsed GeTe and Ge2Sb2Te5 thin films by Scanning Thermal Microscopy (SThM). By SThM measurements and quantitative finite element analysis simulations of two film thicknesses, the PCM Thermal conductivities and Thermal boundary conductances between the PCM and SThM probe are independently estimated for the amorphous and crystalline phase of each stoichiometry.

  • nanoscale resolution Scanning Thermal Microscopy using carbon nanotube tipped Thermal probes
    Physical Chemistry Chemical Physics, 2014
    Co-Authors: Peter Tovee, Dagou A. Zeze, M E Pumarol, Mark C Rosamond, Robert Jones, Michael C Petty, Oleg Kolosov
    Abstract:

    We present an experimental proof of concept of Scanning Thermal nanoprobes that utilize the extreme Thermal conductance of carbon nanotubes (CNTs) to channel heat between the probe and the sample. The integration of CNTs into Scanning Thermal Microscopy (SThM) overcomes the main drawbacks of standard SThM probes, where the low Thermal conductance of the apex SThM probe is the main limiting factor. The integration of CNTs (CNT-SThM) extends SThM sensitivity to Thermal transport measurement in higher Thermal conductivity materials such as metals, semiconductors and ceramics, while also improving the spatial resolution. Investigation of Thermal transport in ultra large scale integration (ULSI) interconnects, using the CNT-SThM probe, showed fine details of heat transport in ceramic layers, vital for mitigating electromigration in ULSI metallic current leads. For a few layer graphene, the heat transport sensitivity and spatial resolution of the CNT-SThM probe demonstrated significantly superior Thermal resolution compared to that of standard SThM probes achieving 20–30 nm topography and ∼30 nm Thermal spatial resolution compared to 50–100 nm for standard SThM probes. The outstanding axial Thermal conductivity, a high aspect ratio and robustness of CNTs can make CNT-SThM the perfect Thermal probe for the measurement of nanoscale thermophysical properties and an excellent candidate for the next generation of Thermal microscopes.

Teodor Gotszalk - One of the best experts on this subject based on the ideXlab platform.

  • Micromachined active test structure for Scanning Thermal Microscopy probes characterization
    Microelectronic Engineering, 2017
    Co-Authors: Paweł Janus, A Sierakowski, M Rudek, W Majstrzyk, Piotr Grabiec, Teodor Gotszalk
    Abstract:

    In this paper we present the design, technology and application of Si/Si3N4 micro calibration stage equipped with Pt microheaters. This 500nm thick MEMS structure with 4 independently controlled microheaters allows for precise control temperature dissipation and contact between surface and tip of cantilever. Localization on thin, low Thermally conductive membrane minimizes the heat transfer to the bulk silicon. In order to increase mechanical stability of the structure, the membrane is supported by the tip. Structure stiffness is increased which allows for characterization of relatively stiff (3070Nm1) piezoresistive Scanning Thermal Microscopy probes. The small size and spatial arrangement of independent heaters allows for the controlled heat flow in the membrane and measurements of the temperature distribution. Display Omitted MEMS structure with 4 microheaters allows for precise control the temperature dissipation and SThM tip-membrane contactSupporting tip increases the stiffness of the structure without drop of the membrane-chip Thermal resistanceNot parasitic heating of the microscope head (in contrary to standard Pt-100 based structures)Flexible platform for various experiments with locally controlled heat sources and temperature sensors

  • investigation of Thermal effects in through silicon vias using Scanning Thermal Microscopy
    Micron, 2014
    Co-Authors: Grzegorz Wielgoszewski, G. Jóźwiak, Michał Babij, Tomasz P Baraniecki, R E Geer, Teodor Gotszalk
    Abstract:

    Abstract Results of quantitative investigations of copper through-silicon vias (TSVs) are presented. The experiments were performed using Scanning Thermal Microscopy (SThM), enabling highly localized imaging of Thermal contrast between the copper TSVs and the surrounding material. Both dc and ac active-mode SThM was used and differences between these variants are shown. SThM investigations of TSVs may provide information on copper quality in TSV, as well as may lead to quantitative investigation of Thermal boundaries in micro- and nanoelectronic structures. A proposal for heat flow analysis in a TSV, which includes the influence of the boundary region between the TSV and the silicon substrate, is presented; estimation of contact resistance and boundary Thermal conductance is also given.

  • Standard-based direct calibration method for Scanning Thermal Microscopy nanoprobes
    Sensors and Actuators A-physical, 2014
    Co-Authors: Grzegorz Wielgoszewski, Michał Babij, R. Szeloch, Teodor Gotszalk
    Abstract:

    Abstract A direct calibration method, which is based on international temperature standards, developed for Scanning Thermal Microscopy (SThM) nanoprobes is presented. The idea of calibration is intended mostly for use with thermoresistive SThM nanoprobes and is based on referencing the tip resistance to melting or freezing points of materials, which are contacted directly by the SThM tip. Particularly, in the presented experiment the gallium melting point is used, which is a defining fixed point of the International Temperature Scale of 1990 (ITS-90). Other points suitable for the SThM calibration are suggested, which makes the presented attempt the first step toward linking the quantitative SThM experiments with international temperature standards and therefore envisaging the traceability of nanoscale temperature measurements.

  • Design, technology, and application of integrated piezoresistive Scanning Thermal Microscopy (SThM) microcantilever
    Scanning Microscopies 2014, 2014
    Co-Authors: Paweł Janus, Daniel Kopiec, A Sierakowski, M Rudek, W Majstrzyk, Piotr Grabiec, Gilles Boëtsch, Teodor Gotszalk, Bridget Koehler
    Abstract:

    In this article we describe a novel piezoresistive cantilever technology The described cantilever can be also applied in the investigations of the Thermal surface properties in all Scanning Thermal Microscopy (SThM) techniques. Batch lithography/etch patterning process combined with focused ion beam (FIB) modification allows to manufacture Thermally active, resistive tips with a nanometer radius of curvature. This design makes the proposed nanoprobes especially attractive for their application in the measurement of the Thermal behavior of micro-and nanoelectronic devices. Developed microcantilever is equipped with piezoresistive deflection sensor. The proposed architecture of the cantilever probe enables easy its easy integration with micro-and nanomanipulators and Scanning electron microscopes. In order to approach very precisely the microcantilever near to the location to be characterized, it is mounted on a compact nanomanipulator based on a novel mobile technology. This technology allows very stable positioning, with a nanometric resolution over several centimeters which is for example useful for large samples investigations. Moreover, thanks to the vacuum-compatibility, the experiments can be carried out inside Scanning electron microscopes.

  • Thermal mapping of a Scanning Thermal Microscopy tip
    Ultramicroscopy, 2013
    Co-Authors: G. Jóźwiak, Teodor Gotszalk, Grzegorz Wielgoszewski, Leszek Kępiński
    Abstract:

    Abstract Scanning Thermal Microscopy (SThM) is a very promising technique for local investigation of temperature and Thermal properties of nanostructures with great application potential in contemporary nanoelectronics and nanotechnology. In order to increase the localization of SThM measurements, the size of probes has recently substantially decreased, which results in novel types of SThM probes manufactured with the use of modern silicon microfabrication technology. Quantitative SThM measurements with these probes need methods, which enable to assess the quality of Thermal contact between the probe and the investigated surface. In this paper we propose a tip Thermal mapping (TThM) procedure, which is used to estimate experimentally the distribution of power dissipated by the tip of an SThM probe. We also show that the proposed power dissipation model explains the results of active-mode SThM measurements and that the TThM procedure is reversible for a given probe and sample.

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